Agilent HSDL-4261
High-Power T-1 (5mm)
AlGaAs Infrared (870nm) Lamp
Data Sheet
Features
Very High Power AlGaAs LED
Technology
870nm Wavelength
T-1 Package
Low Cost
Low Forward Voltage: 1.4V at
20mA
High Speed: 15ns Rise Times
Applications
Industrial IR Equipments
IR Portable Instruments
Consumer Electronics
(Optical mouse etc)
High Speed IR Communications
(IR LANs, IR Modems, IR Dongles
etc)
IR Audio
IR Telephones
Part Number
Lead Form
Shipping Option
HSDL-4261
Straight
Bulk
Description
The HSDL-4261 Infrared
emitter was designed for
applications that require high
power, low forward voltage
and high speed. It utilizes
Aluminum Galium Arsenide
(AlGaAs) LED technology and
is optimized for speed and
efficiency at emission
1.14 0.2
5.8 0.2
5.0 0.2
31.6 min.
0.7 max.
8.7 0.2
2.54
0.50 0.1
CATHODE
FLAT
1.0 min.
wavelengths of 870nm. The
material used produces high
radiant efficiency over a wide
range of currents. The emitter
is packaged in clear T-1
(5mm) package.
2
Absolute Maximum Ratings at 25
C
Electrical Characteristics at 25
C
Optical Characteristics at 25
C
Notes:
1. Derate as shown in Figure 6.
Parameter
Symbol
Min.
Typ.
Max.
Unit
Condition
Reference
Forward Voltage
V
F
-
1.4
1.7
1.5
1.9
V
I
FDC
=20mA
I
FDC
=100mA
Fig. 2
Fig. 3
Forward VoltageTemperature Coefficient
V/T
-
-1.5
-1.3
-
mV/C
I
FDC
=20mA
I
FDC
=100mA
Fig. 4
Series Resistance
R
S
-
4.1
-
Ohms
I
FDC
=100mA
Diode Capacitance
C
O
-
80
-
pF
0V, 1MHz
Reverse Voltage
V
R
3
14
-
V
I
R
=100uA
Thermal Resistance, Junction to Ambient R
ja
-
280
-
C/W
Parameter
Symbol
Min.
Typ.
Max.
Unit
Condition
Reference
Radiant Optical Power
P
O
-
9
45
-
mW
I
FDC
=20mA
I
FDC
=100mA
Radiant On-Axis Intensity
I
E
-
36
180
-
mW/Sr
I
FDC
=20mA
I
FDC
=100mA
Fig. 5
Radiant On-Axis IntensityTemperature
Coefficient
I
E
/
T
-
-0.22
-
%/C
I
FDC
=100mA
Viewing Angle
2
1/2
-
26
-
deg
I
FDC
=20mA
Fig. 7
Peak wavelength
PK
-
870
-
nm
I
FDC
=20mA
Fig. 1
Peak wavelengthTemperature Coefficient
/T
-
0.18
-
nm/C
I
FDC
=20mA
Spectral Width
-
47
52
-
nm
I
FDC
=20mA
I
FDC
=100mA
Fig. 1
Optical Rise and Fall Time
t
r
/t
f
-
15
-
ns
I
FPK
=500mA
Duty Factor=33%
Pulse Width=125ns
Bandwidth
f
c
-
23
-
MHz
Parameter
Symbol
Min.
Max
Unit
Reference
DC Forward Current
I
FDC
-
100
mA
[1], Fig. 2
Power Dissipation
P
DISS
-
190
mW
Reverse Voltage
V
R
5
-
V
Operating Temperature
T
O
-40
70
C
Storage Temperature
T
S
-40
100
C
LED Junction Temperature
T
J
-
110
C
Lead Soldering Temperature
-
260 for 5 sec
C
3
Figure 1. Relative Radiant Intensity vs. Wavelength
Figure 2. DC Forward Current vs. Forward Voltage
Figure 3. Peak Forward Current vs. Forward Voltage
Figure 4. Forward Voltage vs. Ambient Temperature
Figure 5. Relative Radiant Intensity vs. DC Forward Current
Figure 6. DC Forward Current vs. Ambient Temperature
Derated Based on TJMAX=110
0
C
0.0
1.0
2.0
3.0
4.0
5.0
0
20
40
60
80
100
DC Forward Current, I
FDC
(mA)
Relative Radiant Intensity
(Normalized at 20mA)
T
A
= 25C
1
10
100
1000
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
Forward Voltage, V
F
(V)
Peak Forward Current, I
FPK
(mA)
T
A
= 25C
0
20
40
60
80
100
0
10
20
30
40
50
60
70
Ambient Temperature, T
A
(C)
DC Forward Current, I
FDC
(mA)
R
JA
= 400C/W
R
JA
= 500C/W
R
JA
= 300C/W
1
10
100
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
Forward Voltage, V
F
(V)
Forward Current, I
FDC
(mA)
T
A
= 25C
1.0
1.2
1.4
1.6
1.8
2.0
-40
-25
0
25
50
70
85
100
I
FDC
=20mA
I
FDC
=100mA
Ambient Temperature (
o
C)
Forward Voltage, V
F
(V)
0
0.2
0.4
0.6
0.8
1
1.2
750
780
810
840
870
900
930
Wavelength (nm)
Relative Radiant Intensity
Peak Wavelength at
I
FDC
= 20mA, T
A
=25oC
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semiconductors
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of distributors, please go to our web site.
For technical assistance call:
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or (408) 654-8675
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India, Australia, New Zealand: (+65) 6755 1939
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Data subject to change.
Copyright 2004 Agilent Technologies, Inc.
August 19, 2004
5989-1534EN
Figure 7. Radiant Intensity vs. Angular Displacement
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