Agilent HDJD-S722-QR999
Color Sensor
Data Sheet
Features
Convert light to R, G, B voltage
output
Monolithic CMOS IC solution with
integrated R, G, B color filter,
photodiode array, trans-
impedance amplifier in one chip
3 sets of 3x3 photodiode array
design minimize the effect of
contamination and optical
aperture misalignment
Small in size 5x 5x1 mm
Independent gain selection options
for each R, G, B channel
Description
Agilent color sensor is a high
performance, small in size, cost
effective light to voltage
converting sensor. The sensor
combines a photodiode array
and three trans-impedance
amplifiers in a single monolithic
CMOS IC solution. With a Red
(R), Green (G) and Blue (B)
color filters coated over the
photodiode array, the sensor
converts R, G, B light to analog
voltage outputs, denoted by
VR
OUT
, VG
OUT
and VB
OUT
,
respectively. The sensor is
packaged in a 5x5x1 (mm)
surface mount QFN-16 package.
Applications
Agilent color sensor is ideal for
open-loop color identification
and closed-loop color point
control. The sensor is designed
for low illuminance applications
including color detection,
environmental lighting,
industrial process, etc. With
R, G, B photo-sensor and
amplifier integrated in a single
5x5x1 (mm) package, Agilent
color sensor provides a high
performance, small in size and
cost effective solution to color
sensing.
ESD WARNING: Standard CMOS handling precautions should be observed to avoid static discharge.
2
Package Dimension
ESD WARNING: Standard CMOS handling precautions should be observed to avoid static discharge.
5
6
7
8
1
2
3
4
12
11
10
9
16
15
14
13
BOTTOM VIEW
(0.8)
(3.2)
(3.2)
5.0
0.15
5.0
0.15
16L QFN 5X5
1.0
0.15
NOTE: DIMENSIONS ARE IN MILLIMETERS (mm)
(0.3)
3
Part Numbering System
HDJD-S 7 X X-X X X X X
Gain Selection (GS) Option
999: GS 00,01 or 10
Packaging Type
R: Tape and Reel
Product Packaging
Q: QFN
Product ID
22: Component without IR Filter
Pin Out for HDJD-S722-QR999
Pin
Pin Name
Normal Operation
Pin 1
VB
OUT
Analog output voltage for BLUE
Pin 2
VG
OUT
Analog output voltage for GREEN
Pin 3
VR
OUT
Analog output voltage for RED
Pin 4
VDD
5 V DC Supply
Pin 5
GND
Ground
Pin 6
GSGRN1
Gain Selection Green bit 1
Pin 7
GND
Ground
Pin 8
GSRED1
Gain Selection Red bit 1
Pin 9
GSRED0
Gain Selection Red bit 0
Pin 10
NC
No connection
Pin 11
NC
No connection
Pin 12
GSBLUE0
Gain Selection Blue bit 0
Pin 13
GSBLUE1
Gain Selection Blue bit 1
Pin 14
GND
Ground
Pin 15
GSGRN0
Gain Selection Green bit 0
Pin 16
GND
Ground
ESD WARNING: Standard CMOS handling precautions should be observed to avoid static discharge.
4
Theory of Operation
The integral R, G, B color filters
on the photodiode array detect
the R, G, B components of the
light falling on the sensor. The
photodiode converts the R, G, B
light components into
photocurrents. The integrated
transimpedence amplifiers for
R, G, B components then convert
Sensor IC Block Diagram
Absolute Maximum Ratings
[1,2]
Parameter
Symbol
Min.
Max.
Unit
Notes
Supply Voltage
V
DD
4.5
5.5
V
Storage Temperature
T
S
-40
100
C
Operating Temperature
T
A
-40
85
C
Human Body Model ESD Rating
ESD
HBM
1
kV
Notes:
1. Subjecting the part to stresses beyond those listed under this section may cause permanent damage to the device. These are stress ratings only and
do not imply that the devices will function beyond these ratings. Exposure to the extremes of these conditions for extended periods may affect
device reliability.
2. Unless otherwise specified, voltages are referenced to ground.
Recommended Operating Conditions
Parameter
Symbol
Min.
Typ.
Max.
Units
Notes
Operating Temperature
T
A
0
25
70
C
Supply Voltage
V
DD
4.5
5.0
5.5
V
A decoupling capacitor of 100 nF
between V
DD
and ground is recommended.
the photocurrent to analog
voltage outputs. The voltage
output of each R, G, B channel
increases linearly with
increasing light intensity.
VDD5
TRANSIMPEDANCE AMP
RF
GS (1:0)
CF
VROUT
VGOUT
VBOUT
GND
RED GAIN
SELECTION
GSGRN (1:0)
GSBLUE (1:0)
GSRED (1:0)
GREEN GAIN
SELECTION
BLUE GAIN
SELECTION
+
TRANSIMPEDANCE AMP
RF
GS (1:0)
CF
+
TRANSIMPEDANCE AMP
RF
GS (1:0)
CF
+
ESD WARNING: Standard CMOS handling precautions should be observed to avoid static discharge.
5
Operating Conditions and Electrical Requirements
Electrical Characteristics at V
DD
= 5 V, T
A
= 25
C, R
L
= 68 k
Parameter
Symbol
Remark
Min.
Typ.
Max.
Unit
Dark Voltage
V
D
Ee = 0
15
mV
Max. Output Voltage Swing
V
OMAX
4.8
V
Supply Current
I
DD
Ee = 0
2.5
mA
Output Rise Time
tr
Min Vo = 0 V, Peak Vo = 4.3 V
5
s
Output Fall Time
tf
Min Vo = 0 V, Peak Vo = 4.3 V
5
s
GS:10, l
P
= 460 nm
[1]
15
(Blue Channel)
Irradiance
Re
GS:10, l
P
= 542 nm
[2]
19
V/(mW/cm
2
)
Responsivity
(Green Channel)
GS:10, l
P
= 645 nm
[3]
27
(Red Channel)
GS:01, l
P
= 460 nm
[1]
9
(Blue Channel)
Irradiance
Re
GS:01, l
P
= 542 nm
[2]
11
Responsivity
(Green Channel)
V/(mW/cm
2
)
GS:01, l
P
= 645 nm
[3]
16
(Red Channel)
GS:00, l
P
= 460 nm
[1]
5
(Blue Channel)
Irradiance
Re
GS:00, l
P
= 542 nm
[2]
6
V/(mW/cm
2
)
Responsivity
(Green Channel)
GS:00, l
P
= 645 nm
[3]
9
(Red Channel)
GS:10, l
P
= 460 nm
[1]
0.32
(Blue Channel)
Saturation
GS:10, l
P
= 542 nm
[2]
0.25
mW/cm
2
Irradiance
[4]
(Green Channel)
GS:10, l
P
= 645 nm
[3]
0.18
(Red Channel)
GS:01, l
P
= 460 nm
[1]
0.53
(Blue Channel)
Saturation
GS:01, l
P
= 542 nm
[2]
0.44
mW/cm
2
Irradiance
[4]
(Green Channel)
GS:01, l
P
= 645 nm
[3]
0.30
(Red Channel)
GS:00, l
P
= 460 nm
[1]
0.96
(Blue Channel)
Saturation
GS:00, l
P
= 542 nm
[2]
0.80
mW/cm
2
Irradiance
[4]
(Green Channel)
GS:00, l
P
= 645 nm
[3]
0.53
(Red Channel)
Notes:
1. Test condition: using blue diffuse light of peak wavelength (l
P
) 460 nm and spectral half width (Dl
1
/
2
) 25 nm as light source.
2. Test condition: using green diffuse light of peak wavelength (l
P
) 542 nm and spectral half width (Dl
1
/
2
) 35 nm as light source.
3. Test condition: using red diffuse light of peak wavelength (l
P
) 645 nm and spectral half width (Dl
1
/
2
) 20 nm as light source.
4. Saturation irradiance = (Max. output voltage swing)/(Irradiance responsivity).
ESD WARNING: Standard CMOS handling precautions should be observed to avoid static discharge.
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