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Электронный компонент: ACT-S512K32V

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eroflex Circuit Technology - Advanced Multichip Modules SCD3360 REV B 12/17/98
Block Diagram PGA Type Package(P1,P7) & CQFP(F2)
512Kx8
512Kx8
512Kx8
512Kx8
CE
4
OE
A
0
A
18
I/O
0-7
I/O
8-15
I/O
16-23
I/O
24-31
8
8
8
8
CE
3
WE
4
WE
3
WE
2
WE
1
CE
1
CE
2
Pin Description
I/O
0-31
Data I/O
A
018
Address Inputs
WE
14
Write Enables
CE
14
Chip Enables
OE
Output Enable
V
cc
Power Supply
GND
Ground
NC
Not Connected
General Description
The ACTS512K32V is a High
Speed 4 megabit CMOS SRAM
Multichip Module (MCM)
designed for full temperature
range, 3.3V Power Supply,
military, space, or high reliability
mass memory and fast cache
applications.
The MCM can be organized
as a 512K x 32 bits, 1M x 16
bits or 2M x 8 bits device and is
input and output TTL
compatible. Writing is executed
when the write enable (WE)
and chip enable (CE) inputs are
low. Reading is accomplished
when WE is high and CE and
output enable (OE) are both
low. Access time grades of
17ns, 20ns, 25ns, 35ns and
45ns maximum are standard.
The products are designed for
operation over the temperature
range of -55C to +125C and
screened under the full military
environment. DESC Standard
Military Drawing (SMD) part
numbers are pending.
The ACT-S512K32V is
manufactured in Aeroflex's
80,000ft
2
MIL-PRF-38534
certified facility in Plainview,
N.Y.
Features
s
4 Low Power CMOS 512K x 8 SRAMs in one MCM
s
Overall configuration as 512K x 32
s
Input and Output TTL Compatible
s
17, 20, 25, 35 & 45ns Access Times, 15ns Available by
Special Order
s
Full Military (-55C to +125C) Temperature Range
s
+3.3V Power Supply
s
Choice of Surface Mount or PGA Type Co-fired Packages:
q
68Lead, Dual-Cavity CQFP (F2), .88"SQ x .20"max (.18"max
thickness available, contact factory for details) (Drops into the
68 Lead JEDEC .99"SQ CQFJ footprint)
q
66Pin, PGA-Type (P1), 1.38"SQ x .245"max
q
66Pin, PGA-Type (P7), 1.08"SQ x .185"max
s
Internal Decoupling Capacitors
s
DESC SMD# Pending
CIRCUIT TECHNOLOGY
www.aeroflex.com/act1.htm
ACT-S512K32V High Speed 3.3Volt
16 Megabit SRAM Multichip Module
Aeroflex Circuit Technology ACT-S512K32V
SCD3360 REV B 12/17/98 Plainview NY (516) 694-6700
2
Absolute Maximum Ratings
Symbol
Rating
Range
Units
T
C
Case Operating Temperature
Speed 15ns
-40 to +85
C
Speed 17ns to 45ns
-55 to +125
C
T
STG
Storage Temperature
-65 to +150
C
P
D
Maximum Package Power Dissipation
P1,P7 Package
F2 Package
3.0
W
2.7
W
J-C
Hottest Die, Max Thermal Resistance - Junction to Case
P1,P7 Package
F2 Package
2.0
C/W
8.0
C/W
V
G
Maximum Signal Voltage to Ground
-0.5 to +4.6
V
T
L
Maximum Lead Temperature (10 seconds)
300
C
Normal Operating Conditions
Symbol
Parameter
Minimum
Maximum
Units
V
CC
Power Supply Voltage
+3.0
+3.6
V
V
IH
Input High Voltage
+2.0
V
CC
+ 0.3
V
V
IL
Input Low Voltage
-0.3
+0.8
V
Capacitance
(
f = 1MHz, T
C
= 25C
)
Symbol Parameter
Maximum
Units
C
AD
A
0
A
18
Capacitance
50
pF
C
OE
OE Capacitance
50
pF
C
WE
Write Enable Capacitance
20
pF
C
CE
Chip Enable Capacitance
20
pF
C
I
/
O
I/O
0
I/O
31
Capacitance
20
pF
Capacitance is guaranteed by design but not tested.
DC Characteristics
(3.0Vdc< V
CC
< 3.6Vdc, V
SS
= 0V, T
C
= -55C to +125C, Unless otherwise specified)
Parameter
Sym
Conditions
ALL Speeds
Min Max
Units
Input Leakage Current
I
LI
V
CC
= Max, V
IN
= 0 or V
CC
10
A
Output Leakage Current
I
LO
CE = V
IH
, OE = V
IH
, V
OUT
= 0 or V
CC
10
A
Operating Supply Current 32 Bit Mode I
CC1
x32
CE = V
IL
, OE = V
IH
, f = 5 MHz, V
CC
= Max,
CMOS Compatible
600
mA
Standby Current
I
SB1
CE = V
IH
, OE = V
IH
, f = 5 MHz, V
CC
= Max,
CMOS Compatible
80
mA
Operating Supply Current 32 Bit Mode I
CC2
x32 CE = V
IL
, OE = V
IH
, f = 50 MHz, V
CC
=
Max, CMOS Compatible
750
mA
Standby Current
I
SB2
CE = V
CC
, OE = V
IH
, f = 50 MHz, V
CC
=
Max, CMOS Compatible
240
mA
Output Low Voltage
V
OL
I
OL
= 8 mA, V
CC
= Min
0.4
V
Output High Voltage
V
OH
I
OH
= -4.0 mA, V
CC
= Min
2.4
V
Aeroflex Circuit Technology ACT-S512K32V
SCD3360 REV B 12/17/98 Plainview NY (516) 694-6700
3
AC Characteristics
(V
CC
= 3.3V, V
SS
= 0V, Tc = -55C to +125C)
Read Cycle
Parameter
Sym
017
Min Max
020
Min Max
025
Min Max
035
Min Max
045
Min Max
Units
Read Cycle Time
t
RC
17
20
25
35
45
ns
Address Access Time
t
AA
17
20
25
35
45
ns
Chip Enable Access Time
t
ACS
17
20
25
35
45
ns
Output Hold from Address Change
t
OH
0
0
0
0
0
ns
Output Enable to Output Valid
t
OE
9
10
12
25
35
ns
Chip Enable to Output in Low Z *
t
CLZ
3
3
3
3
3
ns
Output Enable to Output in Low Z *
t
OLZ
0
0
0
0
0
ns
Chip Deselect to Output in High Z *
t
CHZ
8
8
10
15
15
ns
Output Disable to Output in High Z *
t
OHZ
8
8
10
15
15
ns
* Parameters guaranteed by design but not tested
Write Cycle
Parameter
Sym
017
Min Max
020
Min Max
025
Min Max
035
Min Max
045
Min Max
Units
Write Cycle Time
t
WC
17
20
25
35
45
ns
Chip Enable to End of Write
t
CW
15
15
20
30
35
ns
Address Valid to End of Write
t
AW
15
15
20
30
35
ns
Data Valid to End of Write
t
DW
12
12
15
20
30
ns
Write Pulse Width
t
WP
13
13
15
25
35
ns
Address Setup Time
t
AS
0
0
0
0
0
ns
Output Active from End of Write *
t
OW
0
0
0
0
0
ns
Write to Output in High Z *
t
WHZ
8
11
13
15
15
ns
Data Hold from Write Time
t
DH
0
0
0
0
0
ns
Address Hold Time
t
AH
0
1
2
2
2
ns
* Parameters guaranteed by design but not tested
Truth Table
Mode
CE
OE
WE
Data I/O
Power
Standby
H
X
X
High Z
Standby (deselect/power down)
Read
L
L
H
Data Out
Active
Read
L
H
H
High Z
Active (deselected)
Write
L
X
L
Data In
Active
Aeroflex Circuit Technology ACT-S512K32V
SCD3360 REV B 12/17/98 Plainview NY (516) 694-6700
4
Timing Diagrams
D
I/O
t
RC
t
OH
t
AA
Data Valid
Previous Data Valid
t
OE
High Z
t
OHZ
Read Cycle Timing Diagrams
Data Valid
t
CLZ
CE
OE
t
ACS
t
CHZ
UNDEFINED
DON'T CARE
Read Cycle 2 (WE = V
IH
)
Write Cycle 2 (CE Controlled, OE = V
IH
)
D
I/O
AC Test Circuit
I
OL
Parameter
Typical
Units
Input Pulse Level
0 3.0
V
Input Rise and Fall
5
ns
Input and Output Timing Reference
Level
1.5
V
Notes:
1) V
Z
is programmable from -2V to +4.6V. 2) I
OL
and I
OH
programmable from 0 to 16 mA. 3) Tester Impedance
Z
O
= 75
. 4)
V
Z
is typically the midpoint of V
OH
and V
OL
. 5) I
OL
and I
OH
are adjusted to simulate a typical resistance
load circuit. 6) ATE Tester includes jig capacitance.
I
OH
To Device Under Test
V
Z
~ 1.5 V (Bipolar Supply)
Current Source
Current Source
C
L
=
50 pF
t
RC
t
AA
t
OLZ
S
EE
N
OTE
S
EE
N
OTE
S
EE
N
OTE
S
EE
N
OTE
Note: Guaranteed by design, but not tested.
Read Cycle 1 (CE = OE = V
IL
, WE = V
IH
)
t
WP
t
DW
Data Valid
t
WC
t
AW
t
AH
D
I/O
t
DH
CE
WE
t
CW
t
AS
A
0-18
A
0-18
A
0-18
t
CW
t
AS
t
WP
t
DW
t
OW
CE
WE
Data Valid
t
WC
t
AW
t
AH
D
I/O
t
DH
t
WHZ
S
EE
N
OTE
A
0-16
S
EE
N
OTE
Write Cycle Timing Diagrams
Write Cycle 1 (WE Controlled, OE = V
IL
)
Aeroflex Circuit Technology ACT-S512K32V
SCD3360 REV B 12/17/98 Plainview NY (516) 694-6700
5
Pin Numbers & Functions
66 Pins -- PGA-Type
Pin #
Function
Pin #
Function
Pin #
Function
Pin #
Function
1
I/O
8
18
A
12
35
I/O
25
52
WE
3
2
I/O
9
19
Vcc
36
I/O
26
53
CS
3
3
I/O
10
20
CS
1
37
A
6
54
GND
4
A
13
21
NC
38
A
7
55
I/O
19
5
A
14
22
I/O
3
39
NC
56
I/O
31
6
A
15
23
I/O
15
40
A
8
57
I/O
30
7
A
16
24
I/O
14
41
A
9
58
I/O
29
8
A
17
25
I/O
13
42
I/O
16
59
I/O
28
9
I/O
0
26
I/O
12
43
I/O
17
60
A
0
10
I/O
1
27
OE
44
I/O
18
61
A
1
11
I/O
2
28
A
18
45
V
CC
62
A
2
12
WE
2
29
WE
1
46
CS
4
63
I/O
23
13
CS
2
30
I/O
7
47
WE
4
64
I/O
22
14
GND
31
I/O
6
48
I/O
27
65
I/O
21
15
I/O
11
32
I/O
5
49
A
3
66
I/O
20
16
A
10
33
I/O
4
50
A
4
17
A
11
34
I/O
24
51
A
5
1.400 SQ
1.000
.600
1.000
.100
.020
.016
.100 TYP
.145
MIN
.025
.035
.245
MAX
Pin 56
Pin 66
Pin 11
Pin 1
Bottom View
MAX
TYP
TYP
TYP
.050 DIA
TYP
TYP
"P1" -- 1.40" SQ PGA Type Package
Side View