050-5998 Rev B 6-2003
MAXIMUM RATINGS
All Ratings: T
C
= 25C unless otherwise specified.
STATIC ELECTRICAL CHARACTERISTICS
Symbol
BV
DSS
V
DS
(ON)
I
DSS
I
GSS
g
fs
V
GS
(TH)
Characteristic / Test Conditions
Drain-Source Breakdown Voltage (V
GS
= 0V, I
D
= 250 A)
On State Drain Voltage
1
(I
D
(ON) = 4.5A, V
GS
= 10V)
Zero Gate Voltage Drain Current (V
DS
= V
DSS
, V
GS
= 0V)
Zero Gate Voltage Drain Current (V
DS
= 0.8 V
DSS
, V
GS
= 0V, T
C
= 125C)
Gate-Source Leakage Current (V
GS
= 30V, V
DS
= 0V)
Forward Transconductance (V
DS
= 25V, I
D
= 4.5A)
Gate Threshold Voltage (V
DS
= V
GS
, I
D
= 50mA)
MIN
TYP
MAX
500
5.0
25
250
100
4
6
3
5
UNIT
Volts
A
nA
mhos
Volts
Symbol
V
DSS
I
D
V
GS
P
D
R
JC
T
J
,T
STG
T
L
Parameter
Drain-Source Voltage
Continuous Drain Current @ T
C
= 25C
Gate-Source Voltage
Total Power Dissipation @ T
C
= 25C
Junction to Case
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
ARF463A/B
500
9
30
180
0.70
-55 to 150
300
UNIT
Volts
Amps
Volts
Watts
C/W
C
RF POWER MOSFETs
N - CHANNEL ENHANCEMENT MODE
125V 100W 100MHz
The ARF463A and ARF463B comprise a symmetric pair of common source RF power transistors designed for push-
pull scientific, commercial, medical and industrial RF power amplifier applications up to 100 MHz. They have been
optimized for both linear and high efficiency classes of operation.
Specified 125 Volt, 81.36 MHz Characteristics:
Output Power = 100 Watts.
Gain = 15dB (Class AB)
Efficiency = 75% (Class C)
Low Cost Common Source RF Package.
Low Vth thermal coefficient.
Low Thermal Resistance.
Optimized SOA for Superior Ruggedness.
TO-247
ARF463A
ARF463B
G
D
S
Common
Source
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
050-5998 Rev B 6-2003
30
45
60
75
90
105
120
FREQUENCY (MHz)
Figure 1, Typical Gain vs Frequency
Class C
V
DD
= 150V
P
out
= 150W
30
25
20
15
10
5
0
GAIN (dB)
DYNAMIC CHARACTERISTICS
ARF463A/B
Symbol
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Test Conditions
V
GS
= 0V
V
DS
= 50V
f = 1 MHz
V
GS
= 15V
V
DD
= 0.5 V
DSS
I
D
= I
D[Cont.]
@ 25C
R
G
= 1.6
MIN
TYP
MAX
1200
1600
140
200
9
12
5.1
10
4.1
8
12.8
20
4
8
UNIT
pF
ns
FUNCTIONAL CHARACTERISTICS
Symbol
G
PS
Test Conditions
f = 81.36 MHz
I
dq
= 50mA V
DD
= 125V
P
out
= 100W
No Degradation in Output Power
Characteristic
Common Source Amplifier Power Gain
Drain Efficiency
Electrical Ruggedness VSWR 10:1
MIN
TYP
MAX
13
15
60
65
UNIT
dB
%
1
Pulse Test: Pulse width < 380 S, Duty Cycle < 2%
APT Reserves the right to change, without notice, the specifications and information contained herein.
1
10
100
500
12
10
8
6
4
2
0
0
1
2
3
4
5
6
CAPACITANCE (pf)
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 2, Typical Capacitance vs. Drain-to-Source Voltage
3000
1000
500
100
50
10
.1
.5
1
5
10
50
I
D
, DRAIN CURRENT (AMPERES)
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 4, Typical Maximum Safe Operating Area
V
GS
, GATE-TO-SOURCE VOLTAGE (VOLTS)
Figure 3, Typical Transfer Characteristics
I
D
, DRAIN CURRENT (AMPERES)
VDS> ID (ON) x RDS (ON)MAX.
250SEC. PULSE TEST
@ <0.5 % DUTY CYCLE
TJ = -55C
TJ = +125C
TJ = +25C
TC =+25C
TJ =+150C
SINGLE PULSE
OPERATION HERE
LIMITED BY RDS (ON)
Ciss
Coss
Crss
36
10
5
1
.5
.1
1mS
10mS
100mS
DC
100uS
050-5998 Rev B 6-2003
T
C
, CASE TEMPERATURE (C)
Figure 5, Typical Threshold Voltage vs Temperature
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 6, Typical Output Characteristics
1.2
1.0
0.8
0.6
0.4
0.2
0.0
-50 -25
0
25
50
75
100 125 150
0
5
10
15
20
25
30
I
D
, DRAIN CURRENT (AMPERES)
V
GS(th)
, THRESHOLD VOLTAGE
(NORMALIZED)
ARF463A/B
5.5V
4.5V
4V
5V
VGS=15 & 10V
6V
8V
25
20
15
10
5
0
Table 1 - Typical Class AB Large Signal Input - Output Impedance
Freq. (MHz)
Zin (
)
Z
OL
(
)
2.0
13.5
27
40
65
80
100
24 - j 5.0
7.8 - j 11
2.1 - j 6.4
.74 - j 3.3
.30 + j .42
.46 + j 2.0
.87 + j 3.7
55 - j 4.8
41 - j 24
23 - j 26.2
13.6 - j 22
6.1 - j 14.2
4.2 - j 10.7
2.7 - j 7.1
Zin - Gate shunted with 25
!!
I
DQ
= 50mA
Z
OL
- Conjugate of optimum load for 100 Watts output at Vdd = 125V
Figure 9b, TRANSIENT THERMAL IMPEDANCE MODEL
Z
JC
, THERMAL IMPEDANCE (C/W)
Note:
Duty Factor D = t1/t2
Peak TJ = PDM x Z
JC + TC
t1
t2
P
DM
SINGLE PULSE
0.5
0.1
0.3
0.7
0.9
0.05
0.80
0.70
0.60
0.50
0.40
0.30
0.20
0.10
0
10
-5
10
-4
10
-3
10
-2
10
-1
1.0
RECTANGULAR PULSE DURATION (SECONDS)
Figure 9a, Typical Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
0.147
0.231
0.321
0.00259F
0.00818F
0.127F
Power
(watts)
Junction
temp. ( "C)
RC MODEL
Case temperature
050-5998 Rev B 6-2003
TO-247 Package Outline
ARF463A/B
15.49 (.610)
16.26 (.640)
5.38 (.212)
6.20 (.244)
6.15 (.242) BSC
4.50 (.177) Max.
19.81 (.780)
20.32 (.800)
20.80 (.819)
21.46 (.845)
1.65 (.065)
2.13 (.084)
1.01 (.040)
1.40 (.055)
5.45 (.215) BSC
3.55 (.138)
3.81 (.150)
2.87 (.113)
3.12 (.123)
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
2.21 (.087)
2.59 (.102)
0.40 (.016)
0.79 (.031)
Source
2-Plcs.
Top View
ARF - A
Device
ARF - B
Gate
Drain
Source
Source
Drain
Gate
Dimensions in Millimeters and (Inches)
NOTE: These two parts comprise a symmetric pair of RF
power transistors and meet the same electrical
specifications. The device pin-outs are the mirror image
of each other to allow ease of use as a push-pull pair.
L1
C1
R2
R1
DUT
L2
L3
C5
C4
C6
C5
L4
125V
+
-
RF
Output
RF
Input
C1 -- 820pF Unelco mounted at
gate lead
C2-C5 -- Arco 463 Mica trimmer
C5-C8 -- 10nF 500V COG chip
L1 -- 3t #18 .3" ID .25"L ~50nH
L2 -- 3t #16 AWG .25" ID .3"L ~58nH
L3 -- 10t #18 AWG .25 ID ~470nH
L4 -- VK200-4B ferrite choke ~3uH
R1-R2 -- 50 Ohm 1/2W Carbon
DUT = ARF463A/B
81.36 MHz Test Circuit
C2
C3
Bias
0 - 12V
C7
C8
APT's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
HAZARDOUS MATERIAL WARNING
The ceramic portion of the device between
leads and mounting surface is beryllium oxide,
BeO. Beryllium oxide dust is toxic when in-
haled. Care must be taken during handling
and mounting to avoid damage to this area .
These devices must never be thrown away
with general industrial or domestic waste.
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