050-4908 Rev B
MAXIMUM RATINGS
All Ratings: T
C
= 25
C unless otherwise specified.
STATIC ELECTRICAL CHARACTERISTICS
Symbol
BV
DSS
V
DS
(ON)
I
DSS
I
GSS
g
fs
V
GS
(TH)
Characteristic / Test Conditions
Drain-Source Breakdown Voltage (V
GS
= 0V, I
D
= 250
A)
On State Drain Voltage
1
(I
D
(ON) = 7.5A, V
GS
= 10V)
Zero Gate Voltage Drain Current (V
DS
= V
DSS
, V
GS
= 0V)
Zero Gate Voltage Drain Current (V
DS
= 0.8 V
DSS
, V
GS
= 0V, T
C
= 125
C)
Gate-Source Leakage Current (V
GS
=
30V, V
DS
= 0V)
Forward Transconductance (V
DS
= 25V, I
D
= 7.5A)
Gate Threshold Voltage (V
DS
= V
GS
, I
D
= 50mA)
MIN
TYP
MAX
450
3
25
250
100
5
8.5
2
5
UNIT
Volts
A
nA
mhos
Volts
Symbol
V
DSS
V
DGO
I
D
V
GS
P
D
R
JC
T
J
,T
STG
T
L
Parameter
Drain-Source Voltage
Drain-Gate Voltage
Continuous Drain Current @ T
C
= 25
C
Gate-Source Voltage
Total Power Dissipation @ T
C
= 25
C
Junction to Case
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
ARF448A/448B
450
450
15
30
230
0.55
-55 to 150
300
UNIT
Volts
Amps
Volts
Watts
C/W
C
RF POWER MOSFETs
N - CHANNEL ENHANCEMENT MODE
150V
250W
65MHz
The ARF448A and ARF448B comprise a symmetric pair of common source RF power transistors designed for push-
pull scientific, commercial, medical and industrial RF power amplifier applications up to 65 MHz.
Specified 150 Volt, 40.68 MHz Characteristics:
Output Power = 250 Watts.
Gain = 15dB (Class C)
Efficiency = 75%
Low Cost Common Source RF Package.
Very High Breakdown for Improved Ruggedness.
Low Thermal Resistance.
Nitride Passivated Die for Improved Reliability.
TO-247
ARF448A
ARF448B
G
D
S
Common
Source
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
USA
405 S.W. Columbia Street
Bend, Oregon 97702-1035
Phone: (541) 382-8028
FAX: (541) 388-0364
EUROPE
Avenue J.F. Kennedy Bt B4 Parc Cadra Nord
F-33700 Merignac - France
Phone: (33) 5 57 92 15 15
FAX: (33) 5 56 47 97 61
APT Website - http://www.advancedpower.com
050-4908 Rev B
10
20
30
40
50
60 65
3000
1000
500
100
50
DYNAMIC CHARACTERISTICS
ARF448A/448B
Symbol
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Test Conditions
V
GS
= 0V
V
DS
= 150V
f = 1 MHz
V
GS
= 15V
V
DD
= 0.5 V
DSS
I
D
= I
D[Cont.]
@ 25
C
R
G
= 1.6
MIN
TYP
MAX
1400
1700
150
200
65
100
7
15
5
10
23
40
12
25
UNIT
pF
ns
FUNCTIONAL CHARACTERISTICS
Symbol
G
PS
Test Conditions
f = 40.68 MHz
V
GS
= 0V V
DD
= 150V
P
out
= 250W
No Degradation in Output Power
Characteristic
Common Source Amplifier Power Gain
Drain Efficiency
Electrical Ruggedness VSWR 20:1
MIN
TYP
MAX
13
15
70
75
UNIT
dB
%
1
Pulse Test: Pulse width < 380
S, Duty Cycle < 2%
APT Reserves the right to change, without notice, the specifications and information contained herein.
1
5
10
50 100
500
GAIN (dB)
FREQUENCY (MHz)
Figure 1, Typical Gain vs Frequency
30
25
20
15
10
5
0
Class C
V
DD
= 150V
P
out
= 250W
0
2
4
6
8
CAPACITANCE (pf)
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 2, Typical Capacitance vs. Drain-to-Source Voltage
1
5
10
50
150
I
D
, DRAIN CURRENT (AMPERES)
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 4, Typical Maximum Safe Operating Area
V
GS
, GATE-TO-SOURCE VOLTAGE (VOLTS)
Figure 3, Typical Transfer Characteristics
I
D
, DRAIN CURRENT (AMPERES)
VDS> ID (ON) x RDS (ON)MAX.
250
SEC. PULSE TEST
@ <0.5 % DUTY CYCLE
TJ = -55
C
TJ = -55
C
TJ = +125
C
TJ = +25
C
TC =+25
C
TJ =+150
C
SINGLE PULSE
OPERATION HERE
LIMITED BY RDS (ON)
10
S
1mS
10mS
100mS
DC
100
S
70
10
5
1
.5
.1
Ciss
Coss
Crss
25
20
15
10
5
0
050-4908 Rev B
40
30
20
10
0
0
60
120
180
240
300
300
240
180
120
60
0
Freq. (MHz)
Z
in
-
gate shunted by 25
Z
OL
-
conjugate of optimum load impedance for 250W at 150V
Z
in
(
)
Z
OL
(
)
2.0
13.5
27.0
40.0
65.0
56.00 - j 06.0
37.00 - j 26.0
18.00 - j 25.0
9.90 - j 19.2
4.35 - j 11.4
20.90 - j 9.2
2.40 - j 6.8
0.57 - j 2.6
0.31 - j 0.5
0.44
+
j 1.9
G
PS
, COMMON SOURCE AMPLIFIER GAIN
(dB)
P
OUT
, POWER OUT (WATTS)
Figure 8, Typical Common Source Amplifier Gain vs Power Out
17
16
15
14
13
T
C
, CASE TEMPERATURE (
C)
Figure 5, Typical Threshold Voltage vs Temperature
1.2
1.1
1.0
0.9
0.8
0.7
0.6
-50
-25
0
25
50
75
100 125 150
0
2
4
6
8
10
1
5
10
15
20
25
30
P
IN
, POWER IN (WATTS)
Figure 7, Typical Power Out vs Power In
P
OUT
, POWER OUT (WATTS)
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 6, Typical Output Characteristics
I
D
, DRAIN CURRENT (AMPERES)
V
GS(th)
, THRESHOLD VOLTAGE
(NORMALIZED)
ARF448A/448B
5.5V
4.5V
5V
6V
VGS=8, 10 & 15V
Z
JC
, THERMAL IMPEDANCE (
C/W)
10
-5
10
-4
10
-3
10
-2
10
-1
1.0
10
RECTANGULAR PULSE DURATION (SECONDS)
Figure 9, Typical Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
Class C
V
DD
= 150V
f = 40.68 MHz
Table 1 - Typical Class C Large Signal Input-Output Impedance
Class C
V
DD
= 150V
f = 40.68 MHz
6.5V
0.6
0.1
0.05
0.01
0.005
0.001
Note:
Duty Factor D =
t1/t
2
Peak TJ = PDM x Z
JC + TC
t1
t2
P
DM
0.1
SINGLE PULSE
0.02
0.05
0.2
D=0.5
0.01
050-4908 Rev B
15.49 (.610)
16.26 (.640)
5.38 (.212)
6.20 (.244)
6.15 (.242) BSC
4.50 (.177) Max.
19.81 (.780)
20.32 (.800)
20.80 (.819)
21.46 (.845)
1.65 (.065)
2.13 (.084)
1.01 (.040)
1.40 (.055)
5.45 (.215) BSC
3.55 (.138)
3.81 (.150)
2.87 (.113)
3.12 (.123)
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
2.21 (.087)
2.59 (.102)
0.40 (.016)
0.79 (.031)
Source
2-Plcs.
Top View
ARF448A
Device
ARF448B
Gate
Drain
Source
Source
Drain
Gate
Dimensions in Millimeters and (Inches)
NOTE: The ARF446 and ARF447 comprise a symmetric
pair of RF power transistors and meet the same electrical
specifications. The device pin-outs are the mirror image
of each other to allow ease of use as a push-pull pair.
L1
C2
T1
R1
DUT
L2
L3
C3
C4
C6
C7
C5
L4
150V
+
-
RF Output
RF Input
C1 -- 1800pF 100V chip
C2-C4 -- Arco 463 Mica Trimmer
C5-C7 -- 1nF 500V COG chip
L1 -- 1" #16 AWG into hairpin ~9.6nH
L2 -- 6t #16 AWG .25" ID ~165nH
L3 -- 10t #18 AWG .25" ID ~0.47
H
L4 -- VK200-4B ferrite choke ~3uH
R1 -- 25 Ohm 1/2W Carbon
T1 -- 9:1 Broadband Transformer
40.48 MHz Test Circuit
C1
Parts List
TO-247 Package Outline
USA
405 S.W. Columbia Street
Bend, Oregon 97702-1035
Phone: (541) 382 - 8028 FAX: (541) 388 - 0364
EUROPE
Avenue J.F. Kennedy Bt B4 Parc Cadra Nord
F-33700 Merignac - France
Phone: (33) 5 57 92 15 15 FAX: (33) 5 56 47 97 61
ARF448A/448B
40.68 MHz Test Circuit
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