N - CHANNEL ENHANCEMENT MODE RF POWER MOSFET
D
G
S
ARF442 200W 100V 13.56MHz
ARF443 200W 100V 13.56MHz
THE ARF442 PIN-OUTS ARE MIRROR IMAGE OF THE ARF443.
MAXIMUM RATINGS
All Ratings: T
C
= 25
C unless otherwise specified.
STATIC ELECTRICAL CHARACTERISTICS
The ARF442 and ARF443 comprise a symmetric pair of RF power transistors designed for narrow-band push-pull
commercial, medical and industrial RF power amplifier applications.
Specified 100 Volt, 13.56 MHz Characteristics:
Output Power = 200 Watts.
Gain = 22dB (Typ.)
Efficiency = 73% (Typ.)
Low Cost Common Source RF Package.
Very High Breakdown for Improved Ruggedness.
Low Thermal Resistance.
Nitride Passivated Die for Improved Reliability.
Symbol
BV
DSS
V
DS
(ON)
I
DSS
I
GSS
g
fs
V
GS
(TH)
Characteristic / Test Conditions
Drain-Source Breakdown Voltage (V
GS
= 0V, I
D
= 250
A)
On State Drain Voltage
1
(I
D
(ON) = 6.5A, V
GS
= 10V)
Zero Gate Voltage Drain Current (V
DS
= V
DSS
, V
GS
= 0V)
Zero Gate Voltage Drain Current (V
DS
= 0.8 V
DSS
, V
GS
= 0V, T
C
= 125
C)
Gate-Source Leakage Current (V
GS
=
30V, V
DS
= 0V)
Forward Transconductance (V
DS
= 10V, I
D
= 5.5A)
Gate Threshold Voltage (V
DS
= V
GS
, I
D
= 50mA)
MIN
TYP
MAX
300
6
250
1000
100
3.5
4.5
2
5
UNIT
Volts
A
nA
mhos
Volts
Symbol
V
DSS
V
DGO
I
D
V
GS
P
D
R
JC
T
J
,T
STG
T
L
Parameter
Drain-Source Voltage
Drain-Gate Voltage
Continuous Drain Current @ T
C
= 25
C
Gate-Source Voltage
Total Power Dissipation @ T
C
= 25
C
Junction to Case
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
ARF442/443
300
300
8
30
167
0.75
-55 to 150
300
UNIT
Volts
Amps
Volts
Watts
C/W
C
TO-247
RF OPERATION 1-15MHz
(
)
POWER MOS IV
050-4506 Rev C
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
USA
405 S.W. Columbia Street
Bend, Oregon 97702-1035
Phone: (541) 382-8028
FAX: (541) 388-0364
EUROPE
Avenue J.F. Kennedy Bt B4 Parc Cadra Nord
F-33700 Merignac - France
Phone: (33) 5 57 92 15 15
FAX: (33) 5 56 47 97 61
APT Website - http://www.advancedpower.com
ARF442/443
050-4506 Rev C
DYNAMIC CHARACTERISTICS
Symbol
C
iss
C
oss
C
rss
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Test Conditions
V
GS
= 0V
V
DS
= 100V
f = 1 MHz
MIN
TYP
MAX
730
900
100
140
33
50
UNIT
pF
FUNCTIONAL CHARACTERISTICS
Symbol
G
PS1
1
G
PS2
2
Test Conditions
V
DD
= 100V
V
GS
= 0V
P
out
= 200W
f = 13.56MHz
V
DD
= 100V, P
out
= 200W
I
DQ
= 50mA, f = 13.56MHz
No Degradation in Output Power
Characteristic
Common Source Amplifier Power Gain
Drain Efficiency
Electrical Ruggedness VSWR 30:1
Common Source Amplifier Power Gain
Drain Efficiency
MIN
TYP
MAX
17
18.9
73
22
65
UNIT
dB
%
dB
%
1
Pulse Test: Pulse width < 380
S, Duty Cycle < 2%
APT Reserves the right to change, without notice, the specifications and information contained herein.
Parts List
C1 = 75-480pF Compression Mica
C2, C3, C4, C5, C6, C7 & C8 = .01
F @ 200V, CK06
C9 = .1
F @ 100V, CK06
C10 = 10
F @ 100V Electrolytic
R1 = 10K
, 5%, 1/4W, Carbon
Q1 = ARF442
Q2 = ARF443
L1 = 7.5 T of #18AWG, ID = .438", L = 0.5
H
BFC1 = Balanced DC Feed Choke; 7 T of #22 stranded PTFE twisted pair on an Indiana General #F624-19-Q1 toroid.
i = 125
RFC1 = 2 T of #18 stranded PTFE on a Fair-Rite #2677006301 shield bead.
i = 2000
T1 = 4:1 Z Conventional Transformer; 2:1 T of #22 stranded PTFE on a Fair-Rite #2843000202 Balun Core.
i = 850
T2 = 1:1 Z Transmission Line Transformer, using 50
coax.
Coax = 22" of mini 50
PTFE coax, OD = .095"
A large 2-hole balun core was constructed by gluing two Fair-Rite #2643102002,
i = 850 cores together.
The transformer is constructed by winding 4.5 turns of the coax around the center of the balun core.
PCB = .062" G10 Epoxy Glass.
V
DD
= 100V
RF
Output
RF
Input
L1
T1
2:1
C1
R1
75-480pF
Q1
C2
C3
RFC1
T2
C8
C9
C10
+
.01F
.1F
10F (100V)
C4
C6
.01F
BFC1
.01F
.01F
0.5H
Q2
C7
.01F
C5
.01F
.01F
10K
TYPICAL 13.56 MHz, 400 WATT PUSH-PULL CLASS 'C' POWER AMPLIFIER CIRCUIT
RF POWER IN (WATTS)
Figure 1, RF Power Out vs RF Power In
Figure 2, RF Power Out vs RF Power In
V
GS
, GATE-TO-SOURCE VOLTAGE (VOLTS)
T
C
, CASE TEMPERATURE (
C)
Figure 2, Typical Transfer Characteristics
Figure 3, Threshold Voltage vs Temperature
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
T
J
, JUNCTION TEMPERATURE (
C)
Figure 4, Maximum DC Safe Operating Area
Figure 5, Breakdown Voltage vs Temperature
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 6, Typical Capacitance vs. Drain-To-Source Voltage
C, CAPACITANCE (pF)
I
D
, DRAIN CURRENT (AMPERES)
I
D
, DRAIN CURRENT (AMPERES)
RF POWER OUT (WATTS)
BV
DSS
(ON), DRAIN-TO-SOURCE BREAKDOWN
V
GS
(TH), THRESHOLD VOLTAGE
VOLTAGE (NORMALIZED)
(NORMALIZED)
ARF442/443
VDS = 30V
250
SEC. PULSE TEST
@ <0.5 % DUTY CYCLE
TC =+25
C
TJ =+150
C
V
DS
= V
GS
1.2
1.1
1.0
0.9
0.8
0.7
1.2
1.1
1.0
0.9
0.8
0.7
TJ = +25
C
TJ = +125
C
TJ = +25
C
TJ = -55
C
TJ = +125
C
TJ = -55
C
Performance of aTypical
Push-Pull Power Amplifier (2-Devices)
f = 13.56 MHz
V
DD
= 100V
Operation Here
Limited By R
DS
(ON)
Ciss
0
1
2
3
4
5
6
7
8
9
10
0
2
4
6
8
10
-50
-25
0
25
50
75
100 125 150
1
5
10
50
100
300
-50
-25
0
25
50
75
100 125 150
.01
.05
.1
.5
1
5
10
50
100
Crss
Coss
500
400
300
200
100
0
16
12
8
4
0
10
5
1
.5
.1
3,000
1,000
500
100
50
10
050-4506 Rev C
15.49 (.610)
16.26 (.640)
5.38 (.212)
6.20 (.244)
6.15 (.242) BSC
4.50 (.177) Max.
19.81 (.780)
20.32 (.800)
20.80 (.819)
21.46 (.845)
1.65 (.065)
2.13 (.084)
1.01 (.040)
1.40 (.055)
2.87 (.113)
3.12 (.123)
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
2.21 (.087)
2.59 (.102)
0.40 (.016)
0.79 (.031)
Dimensions in Millimeters and (Inches)
Source
ARF44O
SOURCE
GATE
DRAIN
3.55 (.138)
3.81 (.150)
15.49 (.610)
16.26 (.640)
5.38 (.212)
6.20 (.244)
6.15 (.242) BSC
4.50 (.177) Max.
19.81 (.780)
20.32 (.800)
20.80 (.819)
21.46 (.845)
1.65 (.065)
2.13 (.084)
1.01 (.040)
1.40 (.055)
3.55 (.138)
3.81 (.150)
2.87 (.113)
3.12 (.123)
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
2.21 (.087)
2.59 (.102)
0.40 (.016)
0.79 (.031)
SOURCE
DRAIN
GATE
Dimensions in Millimeters and (Inches)
Source
ARF44E
5.45 (.215) BSC
2-Plcs.
5.45 (.215) BSC
2-Plcs.
ARF442/443
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
TO-247AD Package Outline
NOTE: The ARF442 and ARF443 comprise a symmetric pair of RF power transistors and
meet the same electrical specifications. The device pin-outs are the mirror image of each
other to allow ease of use as a push-pull pair.
ARF443
ARF442
050-4506 Rev C
USA
405 S.W. Columbia Street
Bend, Oregon 97702-1035
Phone: (541) 382-8028
FAX: (541) 388 -0364
EUROPE
Avenue J.F. Kennedy Bt B4 Parc Cadra Nord
F-33700 Merignac - France
Phone: (33) 5 57 92 15 15 FAX: (33) 5 56 47 97 61
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