APTGF50DDA60T3
A
P
T
G
F
5
0
D
D
A
60T
3 R
e
v 0 S
e
pt
e
m
be
r
,
2004
APT website http://www.advancedpower.com
1 - 6
Absolute maximum ratings
Symbol Parameter
Max
ratings
Unit
V
CES
Collector - Emitter Breakdown Voltage
600
V
T
C
= 25C
65
I
C
Continuous
Collector
Current
T
C
= 80C
50
I
CM
Pulsed Collector Current
T
C
= 25C
230
A
V
GE
Gate Emitter Voltage
20
V
P
D
Maximum Power Dissipation
T
C
= 25C
250
W
RBSOA Reverse Bias Safe Operating Area
T
j
= 125C
100A@500V
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
23
22
13
Q1
CR1
30
8
Q2
7
14
CR2
16
R1
29
15
26
27
4
3
31
32
16
15
18
20
23 22
13
11 12
14
8
7
29
30
28 27 26
3
32
31
10
19
2
25
4
All multiple inputs and outputs must be shorted together
Example: 13/14 ; 29/30 ; 22/23 ...
V
CES
= 600V
I
C
= 50A @ Tc = 80C
Application
AC and DC motor control
Switched Mode Power Supplies
Power Factor Correction
Features
Non Punch Through (NPT) Fast IGBT
- Low voltage drop
- Low tail current
- Switching frequency up to 50 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- Avalanche energy rated
- RBSOA and SCSOA rated
- Symmetrical design
Kelvin emitter for easy drive
Very low stray inductance
High level of integration
Internal thermistor for temperature monitoring
Benefits
Outstanding performance at high frequency
operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals both for power and signal
for easy PCB mounting
Low profile
Easy paralleling due to positive TC of VCEsat
Each leg can be easily paralleled to achieve a
single boost of twice the current capability.
Dual Boost chopper
NPT IGBT Power Module
APTGF50DDA60T3
A
P
T
G
F
5
0
D
D
A
60T
3 R
e
v 0 S
e
pt
e
m
be
r
,
2004
APT website http://www.advancedpower.com
2 - 6
All ratings @ T
j
= 25C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test
Conditions
Min Typ Max Unit
BV
CES
Collector - Emitter Breakdown Voltage
V
GE
= 0V, I
C
= 500A
600
V
T
j
= 25C
1
500
A
I
CES
Zero Gate Voltage Collector Current
V
GE
= 0V
V
CE
= 600V
T
j
= 125C
1 mA
T
j
= 25C
1.7 2.0 2.45
V
CE(on)
Collector Emitter on Voltage
V
GE
=15V
I
C
= 50A
T
j
= 125C
2.2
V
V
GE(th)
Gate
Threshold
Voltage
V
GE
= V
CE
, I
C
= 1mA
4
6
V
I
GES
Gate Emitter Leakage Current
V
GE
= 20V, V
CE
= 0V
400
nA
Dynamic Characteristics
Symbol Characteristic
Test
Conditions
Min Typ Max Unit
C
ies
Input
Capacitance
2200
C
oes
Output
Capacitance
323
C
res
Reverse Transfer Capacitance
V
GE
= 0V
V
CE
= 25V
f = 1MHz
200
pF
Q
g
Total gate Charge
166
Q
ge
Gate Emitter Charge
20
Q
gc
Gate Collector Charge
V
GE
= 15V
V
Bus
= 300V
I
C
= 50A
100
nC
T
d(on)
Turn-on
Delay
Time
40
T
r
Rise Time
9
T
d(off)
Turn-off Delay Time
120
T
f
Fall Time
Inductive Switching (25C)
V
GE
= 15V
V
Bus
= 400V
I
C
= 50A
R
G
= 2.7
12
ns
T
d(on)
Turn-on
Delay
Time
42
T
r
Rise Time
10
T
d(off)
Turn-off Delay Time
130
T
f
Fall Time
21
ns
E
on
Turn-on Switching Energy
0.5
E
off
Turn-off Switching Energy
Inductive Switching (125C)
V
GE
= 15V
V
Bus
= 400V
I
C
= 50A
R
G
= 2.7
1
mJ
E
on
includes diode reverse recovery
In accordance with JEDEC standard JESD24-1
Diode ratings and characteristics
Symbol Characteristic
Test
Conditions
Min Typ Max Unit
V
RRM
Maximum Peak Repetitive Reverse Voltage
600
V
T
j
= 25C
250
I
RM
Maximum Reverse Leakage Current
V
R
=600V
T
j
= 125C
500
A
I
F(A V)
Maximum Average Forward Current
50% duty cycle
Tc = 70C
60
A
I
F
= 60A
1.6
1.8
I
F
= 120A
1.9
V
F
Diode Forward Voltage
I
F
= 60A
T
j
= 125C
1.4
V
T
j
= 25C
130
t
rr
Reverse Recovery Time
T
j
= 125C
170
ns
T
j
= 25C
220
Q
rr
Reverse Recovery Charge
I
F
= 60A
V
R
= 400V
di/dt =200A/s
T
j
= 125C
920
nC
APTGF50DDA60T3
A
P
T
G
F
5
0
D
D
A
60T
3 R
e
v 0 S
e
pt
e
m
be
r
,
2004
APT website http://www.advancedpower.com
3 - 6
Temperature sensor NTC
Symbol Characteristic
Min Typ Max Unit
R
25
Resistance @ 25C
68
k
B
25/85
T
25
= 298.16 K
4080
K
-
=
T
T
B
R
R
T
1
1
exp
25
85
/
25
25
Thermal and package characteristics
Symbol Characteristic
Min Typ Max Unit
IGBT 0.5
R
thJC
Junction
to
Case
Diode
0.9
C/W
V
ISOL
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
2500 V
T
J
Operating junction temperature range
-40
150
T
STG
Storage Temperature Range
-40
125
T
C
Operating Case Temperature
-40
100
C
Torque Mounting torque
To heatsink
M4
4.7 N.m
Wt Package
Weight
110 g
Package outline
17
12
28
1
T: Thermistor temperature
R
T
: Thermistor value at T
APTGF50DDA60T3
A
P
T
G
F
5
0
D
D
A
60T
3 R
e
v 0 S
e
pt
e
m
be
r
,
2004
APT website http://www.advancedpower.com
4 - 6
Typical Performance Curve
Output characteristics (V
GE
=15V)
T
J
=-55C
T
J
=25C
T
J
=125C
0
50
100
150
200
0
1
2
3
4
I
c
,
C
o
l
l
ect
o
r
C
u
r
r
en
t
(
A
)
V
CE
, Collector to Emitter Voltage (V)
250s Pulse Test
< 0.5% Duty cycle
Transfer Characteristics
T
J
=-55C
T
J
=25C
T
J
=125C
0
25
50
75
100
125
150
0
1
2
3
4
5
6
7
8
9
10
V
GE
, Gate to Emitter Voltage (V)
Ic
, C
o
lle
c
t
o
r
C
u
r
r
e
n
t
(
A
)
250s Pulse Test
< 0.5% Duty cycle
Ic=100A
Ic=50A
Ic=25A
0
1
2
3
4
5
6
7
8
6
8
10
12
14
16
V
GE
, Gate to Emitter Voltage (V)
V
CE
, C
o
lle
c
t
o
r
t
o
E
m
it
t
e
r
V
o
lt
a
g
e
(
V
) On state Voltage vs Gate to Emitter Volt.
T
J
= 25C
250s Pulse Test
< 0.5% Duty cycle
Ic=100A
Ic=50A
Ic=25A
0
0.5
1
1.5
2
2.5
3
3.5
4
-50
-25
0
25
50
75
100
125
T
J
, Junction Temperature (C)
V
CE
, C
o
lle
c
t
o
r
t
o
E
m
it
t
e
r
V
o
lt
a
g
e
(
V
) On state Voltage vs Junction Temperature
250s Pulse Test
< 0.5% Duty cycle
V
GE
= 15V
0.70
0.80
0.90
1.00
1.10
1.20
-50
-25
0
25
50
75
100 125
T
J
, Junction Temperature (C)
C
o
l
l
ec
to
r
to
E
m
i
t
t
e
r
B
r
ea
kd
o
w
n
Vo
l
t
a
g
e
(
N
o
r
ma
l
i
z
e
d
)
Breakdown Voltage vs Junction Temp.
0
10
20
30
40
50
60
70
80
-50 -25
0
25
50
75 100 125 150
T
C
, Case Temperature (C)
Ic
, D
C
C
o
lle
c
t
o
r
C
u
r
r
e
n
t
(
A
)
DC Collector Current vs Case Temperature
Gate Charge
V
CE
=120V
V
CE
=300V
V
CE
=480V
0
2
4
6
8
10
12
14
16
18
0
25
50
75
100 125 150 175 200
Gate Charge (nC)
V
GE
, G
a
t
e
t
o
E
m
it
t
e
r
V
o
lt
a
g
e
(
V
)
I
C
= 50A
T
J
= 25C
Output Characteristics (V
GE
=10V)
T
J
=-55C
T
J
=25C
T
J
=125C
0
50
100
150
0
1
2
3
4
Ic
,
C
o
lle
c
t
o
r
C
u
r
r
e
n
t
(
A
)
V
CE
, Collector to Emitter Voltage (V)
250s Pulse Test
< 0.5% Duty cycle
APTGF50DDA60T3
A
P
T
G
F
5
0
D
D
A
60T
3 R
e
v 0 S
e
pt
e
m
be
r
,
2004
APT website http://www.advancedpower.com
5 - 6
V
GE
= 15V
20
30
40
50
60
0
25
50
75
100
125
150
I
CE
, Collector to Emitter Current (A)
t
d
(
on)
,
Tur
n-
O
n
D
e
l
a
y
T
i
m
e
(
n
s
)
Turn-On Delay Time vs Collector Current
Tj = 125C
V
CE
= 400V
R
G
= 2.7
V
GE
=15V,
T
J
=25C
V
GE
=15V,
T
J
=125C
50
75
100
125
150
175
200
0
25
50
75
100
125
150
I
CE
, Collector to Emitter Current (A)
t
d
(
o
f
f
)
,
Tur
n-
O
f
f
D
e
l
a
y
Ti
m
e
(
n
s
)
Turn-Off Delay Time vs Collector Current
V
CE
= 400V
R
G
= 2.7
V
GE
=15V,
T
J
=125C
0
10
20
30
40
50
60
0
25
50
75
100
125
150
I
CE
, Collector to Emitter Current (A)
t
r
, R
i
s
e
T
i
m
e
(
n
s
)
Current Rise Time vs Collector Current
V
CE
= 400V
R
G
= 2.7
T
J
= 25C
T
J
= 125C
0
10
20
30
40
50
60
0
25
50
75
100
125
150
I
CE
, Collector to Emitter Current (A)
t
f
, F
a
ll T
i
m
e
(
n
s
)
Current Fall Time vs Collector Current
V
CE
= 400V, V
GE
= 15V, R
G
= 2.7
T
J
=125C,
V
GE
=15V
0
0.5
1
1.5
2
0
25
50
75
100
125
150
I
CE
, Collector to Emitter Current (A)
E
on
,
T
u
r
n
-O
n
E
n
er
g
y
L
o
ss
(m
J)
Turn-On Energy Loss vs Collector Current
V
CE
= 400V
R
G
= 2.7
T
J
= 125C
0
0.5
1
1.5
2
2.5
0
25
50
75
100
125
150
I
CE
, Collector to Emitter Current (A)
E
of
f
, T
u
r
n
-
o
f
f
E
n
e
r
g
y
L
o
s
s
(
m
J
)
Turn-Off Energy Loss vs Collector Current
V
CE
= 400V
V
GE
= 15V
R
G
= 2.7
Eon, 50A
Eoff, 50A
0
0.5
1
1.5
2
2.5
3
0
5
10
15
20
25
Gate Resistance (Ohms)
Switching Energy Losses vs Gate Resistance
S
w
i
t
ch
i
n
g
E
n
e
r
g
y
L
o
ss
es
(m
J
)
V
CE
= 400V
V
GE
= 15V
T
J
= 125C
0
20
40
60
80
100
120
0
200
400
600
I
C
, Co
l
l
e
c
t
o
r
Cu
r
r
e
n
t
(
A
)
Minimum Switching Safe Operating Area
V
CE
, Collector to Emitter Voltage (V)
APTGF50DDA60T3
A
P
T
G
F
5
0
D
D
A
60T
3 R
e
v 0 S
e
pt
e
m
be
r
,
2004
APT website http://www.advancedpower.com
6 - 6
Cies
Cres
Coes
100
1000
10000
0
10
20
30
40
50
C
,
C
a
p
aci
t
a
n
c
e (
p
F
)
Capacitance vs Collector to Emitter Voltage
V
CE
, Collector to Emitter Voltage (V)
0.9
0.7
0.5
0.3
0.1
0.05
Single Pulse
0
0.1
0.2
0.3
0.4
0.5
0.6
0.00001
0.0001
0.001
0.01
0.1
1
Rectangular Pulse Duration (Seconds)
The
r
m
a
l
I
m
pe
da
n
c
e
(
C
/
W
)
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
Operating Frequency vs Collector Current
hard
switching
ZCS
ZVS
0
40
80
120
160
200
240
0
20
40
60
80
100
I
C
, Collector Current (A)
F
ma
x
,
O
p
e
r
a
t
i
n
g
Fr
e
q
ue
nc
y
(
k
H
z
)
V
CE
= 400V
D = 50%
R
G
= 2.7
T
J
= 125C
T
C
= 75C
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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