APTGF300U120D
A
P
T
G
F
300
U
120D
R
e
v 0 J
u
l
y, 2004
APT website http://www.advancedpower.com
1 5
Absolute maximum ratings
Symbol Parameter
Max
ratings
Unit
V
CES
Collector - Emitter Breakdown Voltage
1200
V
T
c
= 25C
400
I
C
Continuous
Collector
Current
T
c
= 80C
300
I
CM
Pulsed Collector Current
T
c
= 25C
800
A
V
GE
Gate Emitter Voltage
20
V
P
D
Maximum Power Dissipation
T
c
= 25C
2080 W
RBSOA Reverse Bias Safe Operating Area
T
j
= 150C
600A @ 1200V
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
CK
EK
G
E
C
C
CK
E
G
EK
V
CES
= 1200V
I
C
= 300A @ Tc = 80C
Application
Zero Current Switching resonant mode
Features
Non Punch Through (NPT) FAST IGBT
- Low voltage drop
- Low tail current
- Switching frequency up to 50 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- Avalanche energy rated
- RBSOA and SCSOA rated
Kelvin emitter for easy drive
Very low stray inductance
-
Symmetrical design
-
M5 power connectors
High level of integration
Benefits
Outstanding performance at high frequency
operation
Stable temperature behavior
Very rugged
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Easy paralleling due to positive TC of VCEsat
Low profile
Single Switch
with Series diodes
NPT IGBT Power Module
APTGF300U120D
A
P
T
G
F
300
U
120D
R
e
v 0 J
u
l
y, 2004
APT website http://www.advancedpower.com
2 5
All ratings @ T
j
= 25C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test
Conditions
Min Typ Max Unit
BV
CES
Collector - Emitter Breakdown Voltage
V
GE
= 0V, I
C
= 4mA
1200
V
T
j
= 25C
0.4
6
I
CES
Zero Gate Voltage Collector Current
V
GE
= 0V
V
CE
= 1200V
T
j
= 125C
25
mA
T
j
= 25C
3.2
3.9
V
CE(on)
Collector Emitter on Voltage
V
GE
=15V
I
C
= 300A
T
j
= 125C
4
V
V
GE(th)
Gate
Threshold
Voltage
V
GE
= V
CE
, I
C
= 12mA
4.5
6.5
V
I
GES
Gate Emitter Leakage Current
V
GE
= 20V, V
CE
= 0V
1
A
Dynamic Characteristics
Symbol Characteristic
Test
Conditions
Min Typ Max Unit
C
ies
Input
Capacitance
21
C
oes
Output
Capacitance
2.9
C
res
Reverse Transfer Capacitance
V
GE
= 0V
V
CE
= 25V
f = 1MHz
1.52
nF
T
d(on)
Turn-on
Delay
Time
70
T
r
Rise Time
50
T
d(off)
Turn-off Delay Time
500
T
f
Fall Time
30
ns
E
on
Turn-on Switching Energy
17
E
off
Turn-off Switching Energy
Inductive Switching (125C)
V
GE
= 15V
V
Bus
= 600V
I
C
= 300A
R
G
= 2
18
mJ
Series diode ratings and characteristics
Symbol Characteristic
Test
Conditions
Min Typ Max Unit
I
F(A V)
Maximum Average Forward Current
50% duty cycle
Tc = 85C
250
A
I
F
= 300A
2.2
2.5
I
F
= 400A
2.4
V
F
Diode Forward Voltage
I
F
= 400A
T
j
= 150C
2.2
V
T
j
= 25C
13
Q
rr
Reverse Recovery Charge
I
F
= 300A
T
j
= 125C
40
C
Thermal and package characteristics
Symbol Characteristic
Min Typ Max Unit
IGBT
0.06
R
thJC
Junction
to
Case
Diode
0.13
C/W
V
ISOL
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
2500 V
T
J
Operating junction temperature range
-40
150
T
STG
Storage Temperature Range
-40
125
T
C
Operating Case Temperature
-40
100
C
To heatsink
M6
3
5
Torque Mounting
torque
For terminals
M5
2
3.5
N.m
Wt Package
Weight
280 g
APTGF300U120D
A
P
T
G
F
300
U
120D
R
e
v 0 J
u
l
y, 2004
APT website http://www.advancedpower.com
3 5
Package outline
APTGF300U120D
A
P
T
G
F
300
U
120D
R
e
v 0 J
u
l
y, 2004
APT website http://www.advancedpower.com
4 5
Typical Performance Curve
Output characteristics (V
GE
=15V)
T
J
=25C
T
J
=125C
0
50
100
150
200
250
300
350
400
450
0
1
2
3
4
Ic
, C
o
lle
c
t
o
r
c
u
r
r
e
n
t
(
A
)
V
CE
, Collector to Emitter Voltage (V)
250s Pulse Test
< 0.5% Duty cycle
Output characteristics (V
GE
=10V)
T
J
=25C
T
J
=125C
0
50
100
150
200
250
300
350
0
1
2
3
4
Ic
, C
o
lle
c
t
o
r
c
u
r
r
e
n
t
(
A
)
V
CE
, Collector to Emitter Voltage (V)
250s Pulse Test
< 0.5% Duty cycle
Transfer Characteristics
0
100
200
300
400
500
600
4
6
8
10
12
V
GE
, Gate to Emitter Voltage (V)
Ic
, C
o
lle
c
t
o
r
C
u
r
r
e
n
t
(
A
)
250s Pulse Test
< 0.5% Duty cycle
Gate Charge
V
CE
=600V
V
CE
=800V
0
4
8
12
16
20
0
500
1000
1500
2000
2500
Gate Charge (nC)
V
GE
, G
a
t
e
t
o
E
m
it
t
e
r
V
o
lt
a
g
e
(
V
)
I
C
= 300A
T
J
= 25C
0
50
100
150
200
250
300
350
400
0
25
50
75
100
125
150
T
C
, Case Temperature (C)
Ic
, D
C
C
o
lle
c
t
o
r
C
u
r
r
e
n
t
(
A
)
DC Collector Current vs Case Temperature
tdoff
tdon
tr
tf
10
100
1000
0
100
200
300
400
Ic, Collector current (A)
ti
m
e
(n
s
)
Switching times vs collector current
V
CE
= 600V
V
GE
=15V
R
G
=2
T
J
= 125C
Cres
Coes
Cies
1
10
100
0
10
20
30
C
,
C
a
p
a
ci
t
a
n
ce (
n
F
)
V
CE
, Collector to Emitter Voltage (V)
Capacitance vs Collector to Emitter Voltage
Eon
Eoff
0
20
40
60
80
100
120
0
2
4
6
8
10
12
14
16
Gate resistance (Ohms)
S
w
i
t
ch
i
n
g
E
n
er
g
y
l
o
s
ses
(
m
J)
Switching energy losses vs Gate resistance
V
CE
= 600V
V
GE
=15V
I
C
=300A
T
J
= 125C
APTGF300U120D
A
P
T
G
F
300
U
120D
R
e
v 0 J
u
l
y, 2004
APT website http://www.advancedpower.com
5 5
0
100
200
300
400
500
600
700
0
300
600
900
1200
1500
I
C
, C
o
lle
c
t
o
r
c
u
r
r
e
n
t
(
A
)
V
CE
, Collector to Emitter Voltage (V)
Minimum Switching Safe Operating
A
Switching times vs gate resistor
tdon
tdoff
tr
tf
10
100
1000
10000
0
5
10
15
20
Gate resistance (Ohms)
ti
m
e
(
n
s
)
V
CE
= 600V, V
GE
=15V
I
C
=300A, T
J
= 125C
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.9
0.7
0.5
0.3
0.1
0.05
Single Pulse
0
0.01
0.02
0.03
0.04
0.05
0.06
0.07
0.00001
0.0001
0.001
0.01
0.1
1
10
Rectangular Pulse Duration (Seconds)
T
h
er
m
a
l
I
m
p
e
d
a
n
ce (
C
/
W
)
Hard
switching
ZCS
ZCS
0
20
40
60
80
100
50
100 150
200
250
300 350 400
I
C
, Collector Current (A)
F
m
ax,
O
p
er
at
i
n
g
F
r
e
q
u
e
n
c
y (
k
H
z
)
Operating Frequency vs Collector Current
V
CE
= 800V
D = 50%
R
G
= 2
T
J
= 125C
T
C
= 75C
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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