APT33GF120HR
1200V
38A
050-5974 Rev - 6-2000
PRELIMINARY
G
C
E
USA
405 S.W. Columbia Street
Bend, Oregon 97702 -1035
Phone: (541) 382-8028
FAX: (541) 388-0364
EUROPE
Chemin de Magret
F-33700 Merignac - France
Phone: (33) 5 57 92 15 15
FAX: (33) 5 56 47 97 61
The Fast IGBT is a new generation of high voltage power IGBTs. Using
Non-Punch Through Technology the Fast IGBT offers superior ruggedness,
fast switching speed and low Collector-Emitter On voltage.
Low Forward Voltage Drop
High Freq. Switching to 20KHz
Low Tail Current
Ultra Low Leakage Current
Avalanche Rated
RBSOA and SCSOA Rated
Hermetic Package
Fast IGBT
TO-258
MAXIMUM RATINGS
All Ratings: T
C
= 25C unless otherwise specified.
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
MIN
TYP
MAX
1200
4.5
5.5
6.5
2.7
3.2
3.3
3.9
0.8
5.0
100
Characteristic / Test Conditions
Collector-Emitter Breakdown Voltage (V
GE
= 0V, I
C
= 0.8mA)
Gate Threshold Voltage (V
CE
= V
GE
, I
C
= 700A, T
j
= 25C)
Collector-Emitter On Voltage (V
GE
= 15V, I
C
= I
C2
, T
j
= 25C)
Collector-Emitter On Voltage (V
GE
= 15V, I
C
= I
C2
, T
j
= 125C)
Collector Cut-off Current (V
CE
= V
CES
, V
GE
= 0V, T
j
= 25C)
Collector Cut-off Current (V
CE
= V
CES
, V
GE
= 0V, T
j
= 125C)
Gate-Emitter Leakage Current (V
GE
= 20V, V
CE
= 0V)
Symbol
BV
CES
V
GE
(TH)
V
CE
(ON)
I
CES
I
GES
STATIC ELECTRICAL CHARACTERISTICS
UNIT
Volts
mA
nA
Symbol
V
CES
V
CGR
V
GE
I
C1
I
C2
I
CM
I
LM
E
AS
P
D
T
J
,T
STG
T
L
Parameter
Collector-Emitter Voltage
Collector-Gate Voltage (R
GE
= 20K
W
)
Gate-Emitter Voltage
Continuous Collector Current @ T
C
= 25C
Continuous Collector Current @ T
C
= 90C
Pulsed Collector Current
1
@ T
C
= 25C
RBSOA Clamped Inductive Load Current @ R
g
= 11
W
T
C
= 125C
Single Pulse Avalanche Energy
2
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
APT33GF120HR
1200
1200
20
38
33
76
66
65
205
-55 to 150
300
UNIT
Volts
Amps
mJ
Watts
C
G
C
E
PRELIMINARY
Symbol
C
ies
C
oes
C
res
Q
g
Q
ge
Q
gc
t
d
(on)
t
r
t
d
(off)
t
f
t
d
(on)
t
r
t
d
(off)
t
f
E
on
E
off
E
ts
t
d
(on)
t
r
t
d
(off)
t
f
E
ts
gfe
DYNAMIC CHARACTERISTICS
APT33GF120HR
UNIT
C/W
MIN
TYP
MAX
0.61
40
Characteristic
Junction to Case
Junction to Ambient
Symbol
R
Q
JC
R
Q
JA
THERMAL CHARACTERISTICS
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
3
Gate-Emitter Charge
Gate-Collector ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy
Turn-off Switching Energy
Total Switching Losses
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Switching Losses
Forward Transconductance
Test Conditions
Capacitance
V
GE
= 0V
V
CE
= 25V
f = 1 MHz
Gate Charge
V
GE
= 15V
V
CC
= 0.5V
CES
I
C
= I
C2
Resistive Switching (25C)
V
GE
= 15V
V
CC
= 0.8V
CES
I
C
= I
C2
R
G
= 10
W
Inductive Switching (150C)
V
CLAMP
(Peak)
= 0.66V
CES
V
GE
= 15V
I
C
= I
C2
R
G
= 10
W
T
J
= +150C
Inductive Switching (25C)
V
CLAMP
(Peak)
= 0.66V
CES
V
GE
= 15V
I
C
= I
C2
R
G
= 10
W
T
J
= +25C
V
CE
= 20V, I
C
= I
C2
MIN
TYP
MAX
1850
200
110
165
20
100
30
140
150
200
28
60
280
30
3.0
3.0
6.0
28
70
250
25
5.0
8.5
20
UNIT
pF
nC
ns
ns
mJ
ns
mJ
S
050-5974 Rev - 6-2000
1
Repetitive Rating: Pulse width limited by maximum junction temperature.
2
I
C
= I
C2
,
R
GE
= 25
W
,
L = 119H, T
j
= 25C
3
See MIL-STD-750 Method 3471
APT Reserves the right to change, without notice, the specifications and information contained herein.
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