052-6210 RevC 3-2001
APT20GT60BR
TO-247
G
C
E
G
C
E
APT20GT60BR
600V
40A
The Thunderbolt IGBT
TM
is a new generation of high voltage power IGBTs.
Using Non-Punch Through Technology the Thunderbolt IGBTTM offers superior
ruggedness and ultrafast switching speed.
Low Forward Voltage Drop
High Freq. Switching to 150KHz
Low Tail Current
Ultra Low Leakage Current
Avalanche Rated
RBSOA and SCSOA Rated
Thunderbolt IGBT
MAXIMUM RATINGS
All Ratings: T
C
= 25C unless otherwise specified.
STATIC ELECTRICAL CHARACTERISTICS
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
USA
405 S.W. Columbia Street
Bend, Oregon 97702-1035
Phone: (541) 382-8028
FAX: (541) 388-0364
EUROPE
Chemin de Magret
F-33700 Merignac - France
Phone: (33) 5 57 92 15 15
FAX: (33) 5 56 47 97 61
APT Website - http://www.advancedpower.com
MIN
TYP
MAX
600
-15
3
4
5
1.6
2.0
2.5
2.8
40
1000
100
Characteristic / Test Conditions
Collector-Emitter Breakdown Voltage (V
GE
= 0V, I
C
= 0.5mA)
Collector-Emitter Reverse Breakdown Voltage (V
GE
= 0V, I
C
= 50mA)
Gate Threshold Voltage (V
CE
= V
GE
, I
C
= 500A, T
j
= 25C)
Collector-Emitter On Voltage (V
GE
= 15V, I
C
= I
C2
, T
j
= 25C)
Collector-Emitter On Voltage (V
GE
= 15V, I
C
= I
C2
, T
j
= 125C)
Collector Cut-off Current (V
CE
= V
CES
, V
GE
= 0V, T
j
= 25C)
Collector Cut-off Current (V
CE
= V
CES
, V
GE
= 0V, T
j
= 125C)
Gate-Emitter Leakage Current (V
GE
= 20V, V
CE
= 0V)
Symbol
BV
CES
RBV
CES
V
GE
(TH)
V
CE
(ON)
I
CES
I
GES
UNIT
Volts
A
nA
Symbol
V
CES
V
CGR
V
EC
V
GE
I
C1
I
C2
I
CM
I
LM
E
AS
P
D
T
J
,T
STG
T
L
APT20GT60BR
600
600
15
20
40
20
80
40
40
175
-55 to 150
300
UNIT
Volts
Amps
mJ
Watts
C
Parameter
Collector-Emitter Voltage
Collector-Gate Voltage (R
GE
= 20K
W
)
Emitter-Collector Voltage
Gate-Emitter Voltage
Continuous Collector Current @ T
C
= 25C
Continuous Collector Current @ T
C
= 90C
Pulsed Collector Current
1
@ T
C
= 25C
RBSOA Clamped Inductive Load Current @ R
g
= 11
W
T
C
= 125C
Single Pulse Avalanche Energy
2
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
052-6210 RevC 3-2001
APT20GT60BR
Symbol
C
ies
C
oes
C
res
Q
g
Q
ge
Q
gc
t
d
(on)
t
r
t
d
(off)
t
f
t
d
(on)
t
r
t
d
(off)
t
f
E
on
E
off
E
ts
t
d
(on)
t
r
t
d
(off)
t
f
E
ts
gfe
DYNAMIC CHARACTERISTICS
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
3
Gate-Emitter Charge
Gate-Collector ("Miller ") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy
Turn-off Switching Energy
Total Switching Losses
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Switching Losses
Forward Transconductance
Test Conditions
Capacitance
V
GE
= 0V
V
CE
= 25V
f = 1 MHz
Gate Charge
V
GE
= 15V
V
CC
= 0.5V
CES
I
C
= I
C2
Resistive Switching (25C)
V
GE
= 15V
V
CC
= 0.5V
CES
I
C
= I
C2
R
G
= 10
W
Inductive Switching (150C)
V
CLAMP
(Peak)
= 0.66V
CES
V
GE
= 15V
I
C
= I
C2
R
G
= 10
W
T
J
= +150C
Inductive Switching (25C)
V
CLAMP
(Peak)
= 0.66V
CES
V
GE
= 15V
I
C
= I
C2
R
G
= 10
W
T
J
= +25C
V
CE
= 20V, I
C
= I
C2
MIN
TYP
MAX
1045
1200
110
160
65
110
91
140
5.9
10
40
60
9.0
20
27
50
112
170
162
320
13
26
15
30
170
260
110
220
235
470
595
1190
830
1660
12
20
16
30
129
190
45
90
575
1150
4
UNIT
pF
nC
ns
ns
uJ
ns
uJ
S
UNIT
C/W
oz
gm
lbin
Nm
MIN
TYP
MAX
0.72
40
0.22
6.1
10
1.1
Characteristic
Junction to Case
Junction to Ambient
Package Weight
Mounting Torque (
using a 6-32 or 3mm Binding Head Machine Screw
)
Symbol
R
Q
JC
R
Q
JA
W
T
Torque
THERMAL AND MECHANICAL CHARACTERISTICS
1
Repetitive Rating: Pulse width limited by maximum junction temperature.
2
I
C
= I
C2
,
V
CC
= 50V,
R
GE
= 25
W
,
L = 200H, T
j
= 25C
3
See MIL-STD-750 Method 3471
APT Reserves the right to change, without notice, the specifications and information contained herein.
052-6210 RevC 3-2001
APT20GT60BR
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
Figure 1, Typical Output Characteristics (T
J
= 25C)
Figure 2, Typical Output Characteristics (T
J
= 150C)
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
Figure 3, Typical Output Characteristics @ V
GE
= 15V
Figure 4, Maximum Forward Safe Operating Area
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
Q
g
, TOTAL GATE CHARGE (nC)
Figure 5, Typical Capacitance vs Collector-To-Emitter Voltage
Figure 6, Gate Charges vs Gate-To-Emitter Voltage
RECTANGULAR PULSE DURATION (SECONDS)
Figure 7, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
C, CAPACITANCE (pF)
I
C
, COLLECTOR CURRENT (AMPERES)
I
C
, COLLECTOR CURRENT (AMPERES)
V
GE
, GATE-TO-EMITTER VOLTAGE (VOLTS)
I
C
, COLLECTOR CURRENT (AMPERES)
I
C
, COLLECTOR CURRENT (AMPERES)
40
30
20
10
0
60
50
40
30
20
10
0
3,000
1,000
500
100
50
10
T
C
=+25C
T
J
=+150C
SINGLE PULSE
250Sec. Pulse Test
VGE = 15V
IC = IC2
TJ = +25C
f = 1MHz
V
CE
=480V
V
CE
=300V
6V
7V
6V
C
ies
C
res
8V
5V
8V
7V
5V
1.0
0.5
0.1
0.05
0.01
0.005
0.001
Note:
Duty Factor D =
t1/t
2
Peak TJ = PDM x Z
JC + TC
t1
t2
P
DM
0.05
D=0.5
0.2
0.02
0.01
SINGLE PULSE
C
oes
0
4
8
12
16
20
0
4
8
12
16
20
0
1
2
3
4
5
1
5
10
50 100
600
0.01
0.1
1.0
10
50
0
40
80
120
160
10
-5
10
-4
10
-3
10
-2
10
-1
1.0
10
V
GE
=15, 10 & 9V
Z
q
JC
, THERMAL IMPEDANCE (C/W)
V
CE
=120V
T
C
=-55C
0.1
OPERATION
LIMITED
B Y
VCE (SAT)
100S
1mS
10mS
40
30
20
10
0
80
10
5
1
20
16
12
8
4
0
V
GE
=15, 10 & 9V
T
C
=+150C
T
C
=+25C
052-6210 RevC 3-2001
APT20GT60BR
VCC = 0.66 VCES
VGE = +15V
TJ = +25C
IC = IC2
VCC = 0.66 VCES
VGE = +15V
TJ = +125C
RG = 10
W
VCC = 0.66 VCES
VGE = +15V
RG = 10
W
I
C1
0.5 I
C2
I
C2
I
C1
E
on
E
off
E
on
E
off
0.5 I
C2
I
C2
I
C
,
COLLECTOR
CURRENT
(AMPERES)
TOTAL SWITCHING ENERGY LOSSES (mJ)
B
V
CES
, COLLECTOR-TO-EMITTER BREAKDOWN
V
CE
(SAT), COLLECTOR-TO-EMITTER
VOLTAGE
(NORMALIZED)
SATURATION VOLTAGE (VOLTS)
SWITCHING ENERGY LOSSES (mJ)
SWITCHING ENERGY LOSSES (mJ)
I
C
, COLLECTOR CURRENT (AMPERES)
T
J
, JUNCTION TEMPERATURE (C)
T
C
, CASE TEMPERATURE (C)
Figure 8, Typical V
CE
(SAT) Voltage vs Junction Temperature
Figure 9, Maximum Collector Current vs Case Temperature
T
J
, JUNCTION TEMPERATURE (C)
R
G
, GATE RESISTANCE (OHMS)
Figure 10, Breakdown Voltage vs Junction Temperature
Figure 11, Typical Switching Energy Losses vs Gate Resistance
T
J
, JUNCTION TEMPERATURE (C)
I
C
, COLLECTOR CURRENT (AMPERES)
Figure 12, Typical Switching Energy Losses vs. Junction Temperature
Figure 13, Typical Switching Energy Losses vs Collector Current
F, FREQUENCY (KHz)
Figure 14,Typical Load Current vs Frequency
4.0
3.5
3.0
2.5
2.0
1.5
1.0
1.2
1.1
1
0.9
0.8
0.7
2.0
1.0
0.1
100
10
1
40
30
20
10
0
1.0
0.8
0.6
0.4
0.2
0
.6
.5
.4
.3
.2
.1
0
For Both:
Duty Cycle = 50%
TJ = +125C
Tsink = +90C
Gate drive as specified
Power dissapation = 49W
ILOAD = IRMS of fundamental
-50 -25
0
25
50
75
100 125 150
25
50
75
100
125
150
-50
-25
0
25
50
75
100 125 150
0
20
40
60
80
100
-50 -25
0
25
50
75
100 125 150
0
10
20
30
0.1
1.0
10
100
1000
052-6210 RevC 3-2001
APT20GT60BR
*DRIVER SAME TYPE AS D.U.T.
V
CC
= 0.66 V
CES
E
t s
= E
on
+ E
off
V
CE
(on)
t
d
(off)
t
d
(on)
t
f
t
r
1
Figure 15, Switching Loss Test Circuit and Waveforms
Figure 16, Resistive Switching Time Test Circuit and Waveforms
2
V
CC
R
G
R
L
=
.5 V
CES
I
C2
10%
90%
V
GE
(on)
V
CE
(off)
V
GE
(off)
2
1
From
Gate Drive
Circuitry
D.U.T.
B
I
C
I
C
90%
10%
90%
10%
10%
90%
E
off
t
f
t
d
(off)
t
d
(on)
t
r
E
on
I
C
V
CLAMP
100uH
V
CHARGE
A
A
B
D.U.T.
DRIVER*
V
C
A
R
G
V
C
V
C
D.U.T.
V
CE
(SAT)
t=2uS
T0-247 Package Outline
APT's devices are covered by one or more of the following U.S.patents:
4,895,810
5,045,903
5,089,434
5,182,234
5,019,522
5,262,336
5,256,583
4,748,103
5,283,202
5,231,474
5,434,095
5,528,058
15.49 (.610)
16.26 (.640)
5.38 (.212)
6.20 (.244)
6.15 (.242) BSC
4.50 (.177) Max.
19.81 (.780)
20.32 (.800)
20.80 (.819)
21.46 (.845)
1.65 (.065)
2.13 (.084)
1.01 (.040)
1.40 (.055)
3.50 (.138)
3.81 (.150)
2.87 (.113)
3.12 (.123)
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
2.21 (.087)
2.59 (.102)
0.40 (.016)
0.79 (.031)
Collector
Collector
Emitter
Gate
5.45 (.215) BSC
Dimensions in Millimeters and (Inches)
2-Plcs.
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