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Электронный компонент: APT100GT120JU2

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APT100GT120JU2
A
P
T
1
00G
T
120J
U
2
R
e
v 0 A
p
r
i
l
,
2004
APT website http://www.advancedpower.com
1 7




ISOTOP
Absolute maximum ratings
Symbol Parameter
Max
ratings
Unit
V
CES
Collector - Emitter Breakdown Voltage
1200
V
I
C1
T
C
= 25C
140
I
C2
Continuous Collector Current
T
C
= 80C
100
I
CM
Pulsed Collector Current
T
C
= 25C
280
A
V
GE
Gate Emitter Voltage
20
V
P
D
Maximum Power Dissipation
T
C
= 25C
480
W
IF
AV
Maximum Average Forward Current
Duty cycle=0.5 T
C
= 80C
27
IF
RMS
RMS Forward Current (Square wave, 50% duty)
34
A
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
K
E
C
G


V
CES
= 1200V
I
C
= 100A @ Tc = 80C
Application
AC and DC motor control
Switched Mode Power Supplies
Power Factor Correction
Brake switch
Features
Trench + Field Stop IGBT
Technology
- Low
voltage
drop
- Low tail current
- Switching frequency up to 20 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- Avalanche energy rated
- RBSOA and SCSOA rated
ISOTOP
Package (SOT-227)
Very low stray inductance
High level of integration
Benefits
Low conduction losses
Stable temperature behavior
Very rugged
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Easy paralleling due to positive TC of VCEsat
ISOTOP
Boost chopper
Trench IGBT
K
C
G
E
APT100GT120JU2
A
P
T
1
00G
T
120J
U
2
R
e
v 0 A
p
r
i
l
,
2004
APT website http://www.advancedpower.com
2 7
All ratings @ T
j
= 25C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test
Conditions
Min Typ Max Unit
BV
CES
Collector - Emitter Breakdown Voltage
V
GE
= 0V, I
C
= 5mA
1200
V
I
CES
Zero Gate Voltage Collector Current
V
GE
= 0V, V
CE
= 1200V
5
mA
T
j
= 25C
1.4 1.7 2.1
V
CE(on)
Collector Emitter on Voltage
V
GE
=15V
I
C
= 100A
T
j
= 125C
2.0
V
V
GE(th)
Gate Threshold Voltage
V
GE
= V
CE
, I
C
= 4mA
5.0
6.5
V
I
GES
Gate Emitter Leakage Current
V
GE
= 20V, V
CE
= 0V
400
nA

Dynamic Characteristics
Symbol Characteristic
Test
Conditions
Min Typ Max Unit
C
ies
Input
Capacitance
7200
C
oes
Output
Capacitance
400
C
res
Reverse Transfer Capacitance
V
GE
= 0V
V
CE
= 25V
f = 1MHz
300
pF
T
d(on)
Turn-on Delay Time
260
T
r
Rise
Time
30
T
d(off)
Turn-off Delay Time
420
T
f
Fall Time
Resistive Switching (25C)
V
GE
= 15V
V
Bus
= 600V
I
C
= 100A
R
G
= 3.9
W
70
ns
T
d(on)
Turn-on Delay Time
290
T
r
Rise
Time
45
T
d(off)
Turn-off Delay Time
520
T
f
Fall
Time
90
ns
E
on
Turn-on Switching Energy
10
E
off
Turn-off Switching Energy
Inductive Switching (125C)
V
GE
= 15V
V
Bus
= 600V
I
C
= 100A
R
G
= 3.9
W
12
mJ
APT100GT120JU2
A
P
T
1
00G
T
120J
U
2
R
e
v 0 A
p
r
i
l
,
2004
APT website http://www.advancedpower.com
3 7
Diode ratings and characteristics
Symbol Characteristic
Test
Conditions
Min Typ Max Unit
I
F
= 30A
2.0
2.5
I
F
= 60A
2.3
V
F
Diode Forward Voltage
I
F
= 30A
T
j
= 125C
1.8
V
V
R
= 1200V
T
j
= 25C
250
I
RM
Maximum Reverse Leakage Current
V
R
= 1200V
T
j
= 125C
500
A
C
T
Junction
Capacitance
V
R
=
200V
32 pF
Reverse Recovery Time
I
F
=1A,V
R
=30V
di/dt =100A/s
T
j
= 25C
31
T
j
= 25C
370
t
rr
Reverse Recovery Time
T
j
= 125C
500
ns
T
j
= 25C
5
I
RRM
Maximum Reverse Recovery Current
T
j
= 125C
12
A
T
j
= 25C
660
Q
rr
Reverse Recovery Charge
I
F
= 30A
V
R
= 800V
di/dt =200A/s
T
j
= 125C
3450
nC
t
rr
Reverse Recovery Time
220
ns
Q
rr
Reverse Recovery Charge
4650
nC
I
RRM
Maximum Reverse Recovery Current
I
F
= 30A
V
R
= 800V
di/dt =1000A/s
T
j
= 125C
37 A


Thermal and package characteristics
Symbol Characteristic
Min Typ Max Unit
IGBT
0.26
R
thJC
Junction
to
Case
Diode
1.1
R
thJA
Junction to Ambient (IGBT & Diode)
20
C/W
V
ISOL
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
2500 V
T
J
,T
STG
Storage
Temperature
Range
-55
150
T
L
Max Lead Temp for Soldering:0.063" from case for 10 sec
300
C
Torque Mounting
torque
(Mounting = 8-32 or 4mm Machine and terminals = 4mm Machine)
1.5
N.m
Wt Package
Weight
29.2 g


Typical IGBT Performance Curve
0
5
10
15
20
25
30
35
40
0
20
40
60
80 100 120 140
I
C
(A)
Fm
ax
,
O
p
er
at
i
n
g
F
r
equ
e
ncy

(
k
H
z
)
V
CE
=600V
D=50%
R
G
=3.9
T
J
=125C
Operating Frequency vs Collector Current
APT100GT120JU2
A
P
T
1
00G
T
120J
U
2
R
e
v 0 A
p
r
i
l
,
2004
APT website http://www.advancedpower.com
4 7
Output Characteristics (V
GE
=15V)
T
J
=25C
T
J
=125C
0
50
100
150
200
0
1
2
3
4
V
CE
(V)
I
C
(A
)
Output Characteristics
V
GE
=15V
V
GE
=13V
V
GE
=17V
V
GE
=9V
0
50
100
150
200
0
1
2
3
4
V
CE
(A)
I
C
(A
)
T
J
= 125C
Transfert Characteristics
T
J
=25C
T
J
=125C
0
50
100
150
200
5
6
7
8
9
10
11
12
V
GE
(V)
I
C
(A
)
Energy losses vs Collector Current
Eon
Eoff
0
5
10
15
20
25
0
25
50
75 100 125 150 175 200
I
C
(A)
E (
m
J
)
V
CE
= 600V
V
GE
= 15V
R
G
= 3.9
T
J
= 125C
Eon
Eoff
0
5
10
15
20
25
0
5
10
15
20
25
Gate Resistance (ohms)
E (
m
J
)
V
CE
= 600V
V
GE
=15V
I
C
= 100A
T
J
= 125C
Switching Energy Losses vs Gate Resistance
Reverse Safe Operating Area
0
40
80
120
160
200
240
0
400
800
1200
1600
V
CE
(V)
I
C
(A
)
V
GE
=15V
T
J
=125C
R
G
=3.9
maximum Effective Transient Thermal Impedance, Junction to Pulse Duration
0.9
0.7
0.5
0.3
0.1
0.05
Single Pulse
0
0.05
0.1
0.15
0.2
0.25
0.3
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
The
r
m
a
l
I
m
pe
da
nc
e
(C
/
W
)
APT100GT120JU2
A
P
T
1
00G
T
120J
U
2
R
e
v 0 A
p
r
i
l
,
2004
APT website http://www.advancedpower.com
5 7
Typical Diode Performance Curve
APT100GT120JU2
A
P
T
1
00G
T
120J
U
2
R
e
v 0 A
p
r
i
l
,
2004
APT website http://www.advancedpower.com
6 7
APT100GT120JU2
A
P
T
1
00G
T
120J
U
2
R
e
v 0 A
p
r
i
l
,
2004
APT website http://www.advancedpower.com
7 7
SOT-227 (ISOTOP
) Package Outline
31.5 (1.240)
31.7 (1.248)
Dimensions in Millimeters and (Inches)
7.8 (.307)
8.2 (.322)
30.1 (1.185)
30.3 (1.193)
38.0 (1.496)
38.2 (1.504)
14.9 (.587)
15.1 (.594)
11.8 (.463)
12.2 (.480)
8.9 (.350)
9.6 (.378)
Hex Nut M4
(4 places)
0.75 (.030)
0.85 (.033)
12.6 (.496)
12.8 (.504)
25.2 (0.992)
25.4 (1.000)
1.95 (.077)
2.14 (.084)
*
r = 4.0 (.157)
(2 places)
4.0 (.157)
4.2 (.165)
(2 places)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
3.3 (.129)
3.6 (.143)
Emitter terminals are shorted
internally. Current handling
capability is equal for either
Emitter terminal.
ISOTOP
is a Registered Trademark of SGS Thomson

APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
Emitter
Gate
Collector
Cathode