One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781/329-4700
World Wide Web Site: http://www.analog.com
Fax: 781/326-8703
Analog Devices, Inc., 1998
REV. A
Information furnished by Analog Devices is believed to be accurate and
reliable. However, no responsibility is assumed by Analog Devices for its
use, nor for any infringements of patents or other rights of third parties
which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of Analog Devices.
a
LC
2
MOS Precision
Mini-DIP Analog Switch
ADG417
FEATURES
44 V Supply Maximum Ratings
V
SS
to V
DD
Analog Signal Range
Low On Resistance (<35 )
Ultralow Power Dissipation (<35 W)
Fast Switching Times
t
ON
(160 ns max)
t
OFF
(100 ns max)
Break-Before-Make Switching Action
Plug-In Replacement for DG417
APPLICATIONS
Precision Test Equipment
Precision Instrumentation
Battery Powered Systems
Sample Hold Systems
FUNCTIONAL BLOCK DIAGRAM
ADG417
IN
D
S
SWITCH SHOWN FOR A
LOGIC "1" INPUT
PRODUCT HIGHLIGHTS
1. Extended Signal Range
The ADG417 is fabricated on an enhanced LC
2
MOS process,
giving an increased signal range that extends to the supply
rails.
2. Ultralow Power Dissipation
3. Low R
ON
4. Single Supply Operation
For applications where the analog signal is unipolar, the
ADG417 can be operated from a single rail power supply.
The part is fully specified with a single +12 V power supply
and will remain functional with single supplies as low as
+5 V.
GENERAL DESCRIPTION
The ADG417 is a monolithic CMOS SPST switch. This switch
is designed on an enhanced LC
2
MOS process that provides low
power dissipation yet gives high switching speed, low on resis-
tance and low leakage currents.
The on resistance profile of the ADG417 is very flat over the
full analog input range ensuring excellent linearity and low
distortion. The part also exhibits high switching speed and high
signal bandwidth. CMOS construction ensures ultralow power
dissipation making the parts ideally suited for portable and
battery powered instruments.
The ADG417 switch, which is turned ON with a logic low on
the control input, conducts equally well in both directions when
ON and has an input signal range that extends to the supplies.
In the OFF condition, signal levels up to the supplies are
blocked. The ADG417 exhibits break-before-make switching
action for use in multiplexer applications. Inherent in the design
is low charge injection for minimum transients when switching
the digital input.
B Version
T Version
40 C to
55 C to
Parameter
+25 C
+85 C
+25 C
+125 C
Units
Test Conditions/Comments
ANALOG SWITCH
Analog Signal Range
V
SS
to V
DD
V
SS
to V
DD
V
R
ON
25
25
typ
V
D
=
12.5 V, I
S
= 10 mA
35
45
35
45
max
V
DD
= +13.5 V, V
SS
= 13.5 V
LEAKAGE CURRENTS
V
DD
= +16.5 V, V
SS
= 16.5 V
Source OFF Leakage I
S
(OFF)
0.1
0.1
nA typ
V
D
=
15.5 V, V
S
= 15.5 V;
0.25
5
0.25
15
nA max
Test Circuit 2
Drain OFF Leakage I
D
(OFF)
0.1
0.1
nA typ
V
D
=
15.5 V, V
S
= 15.5 V;
0.25
5
0.25
15
nA max
Test Circuit 2
Channel ON Leakage I
D
, I
S
(ON)
0.1
0.1
nA typ
V
S
= V
D
=
15.5 V;
0.4
5
0.4
30
nA max
Test Circuit 3
DIGITAL INPUTS
Input High Voltage, V
INH
2.4
2.4
V min
Input Low Voltage, V
INL
0.8
0.8
V max
Input Current
I
INL
or I
INH
0.005
0.005
A typ
V
IN
= V
INL
or V
INH
0.5
0.5
A max
DYNAMIC CHARACTERISTICS
2
t
ON
100
100
ns typ
R
L
= 300
, C
L
= 35 pF;
160
200
145
200
ns max
V
S
=
10 V; Test Circuit 4
t
OFF
60
60
ns typ
R
L
= 300
, C
L
= 35 pF;
100
150
100
150
ns max
V
S
=
10 V; Test Circuit 4
Charge Injection
7
7
pC typ
V
S
= 0 V, R
L
= 0
,
C
L
= 10 nF; Test Circuit 5
OFF Isolation
80
80
dB typ
R
L
= 50
, f = 1 MHz;
Test Circuit 6
C
S
(OFF)
6
6
pF typ
C
D
(OFF)
6
6
pF typ
C
D
, C
S
(ON)
55
55
pF typ
POWER REQUIREMENTS
V
DD
= +16.5 V, V
SS
= 16.5 V
I
DD
0.0001
0.0001
A typ
V
IN
= 0 V or 5 V
1
2.5
1
2.5
A max
I
SS
0.0001
0.0001
A typ
1
2.5
1
2.5
A max
I
L
0.0001
0.0001
A typ
V
L
= +5.5 V
1
2.5
1
2.5
A max
NOTES
1
Temperature ranges are as follows: B Version: 40
C to +85
C; T Version: 55
C to +125
C.
2
Guaranteed by design, not subject to production test.
Specifications subject to change without notice.
REV. A
2
ADG417SPECIFICATIONS
Dual Supply
1
(V
DD
= +15 V 10%, V
SS
= 15 V 10%, V
L
= +5 V 10%, GND = 0 V, unless otherwise noted)
ORDERING GUIDE
Model
Temperature Range
Package Options*
ADG417BN
40
C to +85
C
N-8
ADG417BR
40
C to +85
C
SO-8
*N = Plastic DIP, SO = 0.15" Small Outline IC (SOIC).
ADG417
REV. A
3
Single Supply
1
B Version
T Version
40 C to
55 C to
Parameter
+25 C
+85 C
+25 C
+125 C
Units
Test Conditions/Comments
ANALOG SWITCH
Analog Signal Range
0 to V
DD
0 to V
DD
V
R
ON
40
40
typ
V
D
= +3 V, +8.5 V, I
S
= 10 mA
60
70
max
V
DD
= +10.8 V
LEAKAGE CURRENT
V
DD
= +13.2 V
Source OFF Leakage I
S
(OFF)
0.1
0.1
nA typ
V
D
= 12.2 V/1 V, V
S
= 1 V/12.2 V;
0.25
5
0.25
15
nA max
Test Circuit 2
Drain OFF Leakage I
D
(OFF)
0.1
0.1
nA typ
V
D
= 12.2 V/1 V, V
S
= 1 V/12.2 V;
0.25
5
0.25
15
nA max
Test Circuit 2
Channel ON Leakage I
D
, I
S
(ON)
0.1
0.1
nA typ
V
S
= V
D
= 12.2 V/1 V;
0.4
5
0.4
30
nA max
Test Circuit 3
DIGITAL INPUTS
Input High Voltage, V
INH
2.4
2.4
V min
Input Low Voltage, V
INL
0.8
0.8
V max
Input Current
I
INL
or I
INH
0.005
0.005
A typ
V
IN
= V
INL
or V
INH
0.5
0.5
A max
DYNAMIC CHARACTERISTICS
2
t
ON
180
250
180
250
ns max
R
L
= 300
, C
L
= 35 pF;
V
S
= +8 V; Test Circuit 4
t
OFF
85
110
85
110
ns max
R
L
= 300
, C
L
= 35 pF;
V
S
= +8 V; Test Circuit 4
Charge Injection
11
11
pC typ
V
S
= 0 V, R
S
= 0
,
C
L
= 10 nF; Test Circuit 5
OFF Isolation
80
80
dB typ
R
L
= 50
, f = 1 MHz;
Test Circuit 6
C
S
(OFF)
13
13
pF typ
C
D
(OFF)
13
13
pF typ
C
D
, C
S
(ON)
65
65
pF typ
POWER REQUIREMENTS
V
DD
= +13.2 V
I
DD
0.0001
0.0001
A typ
V
IN
= 0 V or 5 V
1
2.5
1
2.5
A max
I
L
0.0001
0.0001
A typ
V
L
= +5.5 V
1
2.5
1
2.5
A max
NOTES
1
Temperature ranges are as follows: B Version: 40
C to +85
C; T Version: 55
C to +125
C.
2
Guaranteed by design, not subject to production test.
Specifications subject to change without notice.
(V
DD
= +12 V 10%, V
SS
= 0 V, V
L
= +5 V 10%, GND = 0 V, unless otherwise noted)
Table I. Truth Table
Logic
Switch Condition
0
ON
1
OFF
PIN CONFIGURATION
DIP/SOIC
TOP VIEW
(Not to Scale)
8
7
6
5
1
2
3
4
S
NC
GND
D
V
SS
IN
V
L
V
DD
ADG417
NC = NO CONNECT
REV. A
4
ADG417
ABSOLUTE MAXIMUM RATINGS
1
(T
A
= +25
C unless otherwise noted)
V
DD
to V
SS
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +44 V
V
DD
to GND . . . . . . . . . . . . . . . . . . . . . . . . . . 0.3 V to +25 V
V
SS
to GND . . . . . . . . . . . . . . . . . . . . . . . . . . +0.3 V to 25 V
V
L
to GND . . . . . . . . . . . . . . . . . . . . . . 0.3 V to V
DD
+ 0.3 V
Analog, Digital Inputs
2
. . . . . . . . . . . . . V
SS
2 V to V
DD
+2 V
or 30 mA, Whichever Occurs First
Continuous Current, S or D . . . . . . . . . . . . . . . . . . . . . 30 mA
Peak Current, S or D . . . . . . . . . . . . . . . . . . . . . . . . . 100 mA
(Pulsed at 1 ms, 10% Duty Cycle Max)
Operating Temperature Range
Industrial (B Version) . . . . . . . . . . . . . . . . . 40
C to +85
C
Extended (T Version) . . . . . . . . . . . . . . . . 55
C to +125
C
Storage Temperature Range . . . . . . . . . . . . . 65
C to +150
C
Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . 150
C
Plastic Package, Power Dissipation . . . . . . . . . . . . . . . 400 mW
JA
, Thermal Impedance . . . . . . . . . . . . . . . . . . . . 100
C/W
Lead Temperature, Soldering (10 sec) . . . . . . . . . . . +260
C
SOIC Package, Power Dissipation . . . . . . . . . . . . . . . . 400 mW
JA
, Thermal Impedance . . . . . . . . . . . . . . . . . . . . 155
C/W
Lead Temperature, Soldering
Vapor Phase (60 sec). . . . . . . . . . . . . . . . . . . . . . . +215
C
Infrared (15 sec) . . . . . . . . . . . . . . . . . . . . . . . . . . +220
C
NOTES
1
Stresses above those listed under Absolute Maximum Ratings may cause perma-
nent damage to the device. This is a stress rating only; functional operation of the
device at these or any other conditions above those listed in the operational
sections of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability. Only one absolute
maximum rating may be applied at any one time.
2
Overvoltages at IN, S or D will be clamped by internal diodes. Current should be
limited to the maximum ratings given.
V
D
(V
S
)
Analog voltage on terminals D, S.
C
S
(OFF)
"OFF" switch source capacitance.
C
D
(OFF)
"OFF" switch drain capacitance.
C
D
, C
S
(ON)
"ON" switch capacitance.
t
ON
Delay between applying the digital control
input and the output switching on.
t
OFF
Delay between applying the digital control
input and the output switching off.
V
INL
Maximum input voltage for logic "0."
V
INH
Minimum input voltage for logic "1."
I
INL
(I
INH
)
Input current of the digital input.
Charge Injection
A measure of the glitch impulse transferred
from the digital input to the analog output
during switching.
Off Isolation
A measure of unwanted signal coupling
through an "OFF" channel.
I
DD
Positive supply current.
I
SS
Negative supply current.
I
L
Logic supply current.
TERMINOLOGY
V
DD
Most positive power supply potential.
V
SS
Most negative power supply potential in dual
supplies. In single supply applications, it
may be connected to GND.
V
L
Logic power supply (+5 V).
GND
Ground (0 V) reference.
S
Source terminal. May be an input or an
output.
D
Drain terminal. May be an input or an
output.
IN
Logic control input.
R
ON
Ohmic resistance between D and S.
I
S
(OFF)
Source leakage current with the switch
"OFF."
I
D
(OFF)
Drain leakage current with the switch
"OFF."
I
D
, I
S
(ON)
Channel leakage current with the switch
"ON."
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection.
Although the ADG417 features proprietary ESD protection circuitry, permanent damage may
occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD
precautions are recommended to avoid performance degradation or loss of functionality.
WARNING!
ESD SENSITIVE DEVICE
R
ON
50
0
15
30
10
10
20
15
40
10
5
0
5
V
S
, V
D
Volts
T
A
= +25 C
V
DD
= +12V
V
SS
= 12V
V
DD
= +5V
V
SS
= 5V
V
DD
= +10V
V
SS
= 10V
V
DD
= +15V
V
SS
= 15V
Figure 1. R
ON
as a Function of V
D
(V
S
): Dual Supply Voltage
50
0
15
30
10
10
20
15
40
10
5
0
5
R
ON
V
S
, V
D
Volts
+85 C
+125 C
+25 C
V
DD
= +15V
V
SS
= 15V
V
L
= +5V
Figure 2. R
ON
as a Function of V
D
(V
S
) for Different
Temperatures
0.02
0.03
15
0.00
0.02
10
0.01
15
0.01
10
5
0
5
LEAKAGE CURRENT nA
V
S
, V
D
Volts
I
D
(OFF)
I
D
(ON)
I
S
(OFF)
V
DD
= +15V
V
SS
= 15V
T
A
= +25 C
Figure 3. Leakage Currents as a Function of V
S
(V
D
)
100
0
15
60
20
5
40
0
80
10
R
ON
V
S
, V
D
Volts
T
A
= +25 C
V
DD
= +5V
V
SS
= 0V
V
DD
= +10V
V
SS
= 0V
V
DD
= +12V
V
SS
= 0V
V
DD
= +15V
V
SS
= 0V
Figure 4. R
ON
as a Function of V
D
(V
S
): Single Supply
Voltage
R
ON
V
S
, V
D
Volts
100
0
12
60
20
3
40
0
80
9
6
V
DD
= +12V
V
SS
= 0V
V
L
= +5V
+125 C
+25 C
+85 C
Figure 5. R
ON
as a Function of V
D
(V
S
) for Different
Temperatures
0.006
0.004
12
0.002
0.002
2
0.000
0
0.004
10
8
6
4
LEAKAGE CURRENT nA
V
S
, V
D
Volts
I
D
(OFF)
I
D
(ON)
I
S
(OFF)
V
DD
= +12V
V
SS
= 0V
T
A
= +25 C
Figure 6. Leakage Currents as a Function of V
S
(V
D
)
Typical Performance CharacteristicsADG417
REV. A
5
REV. A
6
ADG417
10mA
1nA
10
7
1 A
10nA
10
3
100nA
10
2
1mA
10 A
100 A
10
6
10
5
10
4
FREQUENCY Hz
I
SUPPLY
I
L
I+, I
V
DD
= +15V
V
SS
= 15V
V
L
= +5V
Figure 7. Supply Current vs. Input Switching Frequency
0
50
100
150
200
250
300
5
7
9
11
13
15
SUPPLY VOLTAGE Volts
t
ns
V = +5V
IN
t
ON
SINGLE SUPPLY
t
ON
DUAL SUPPLY
t
OFF
DUAL SUPPLY
t
OFF
SINGLE SUPPLY
Figure 8. Switching Time vs. Power Supply
ADG417
REV. A
7
Test Circuits
S
D
V
S
V
D
I
S
(OFF)
I
D
(OFF)
Test Circuit 2. Off Leakage
S
D
V
S
V
D
I
D
(ON)
Test Circuit 3. On Leakage
I
DS
S
D
V
S
R
ON
= V
1
/I
DS
V1
Test Circuit 1. On Resistance
V
S
S2
IN
GND
V
SS
R
L
300
C
L
35pF
V
OUT
D
V
L
V
DD
3V
V
IN
50%
50%
90%
V
DD
V
L
0.1 F
0.1 F
V
SS
0.1 F
90%
t
ON
t
OFF
V
OUT
Test Circuit 4. Switching Times
V
S
S2
IN
GND
V
SS
C
L
10nF
V
OUT
D
V
L
V
DD
3V
V
IN
V
DD
V
L
0.1 F
0.1 F
V
SS
0.1 F
V
OUT
R
L
V
OUT
Q
INJ
= C
L
V
OUT
Test Circuit 5. Charge Injection
V
S
IN
V
IN
GND
V
SS
V
SS
R
L
50
V
OUT
D
V
L
V
DD
0.1 F
0.1 F
S
0.1 F
V
L
V
DD
Test Circuit 6. Off Isolation
REV. A
8
ADG417
C1974a09/98
PRINTED IN U.S.A.
OUTLINE DIMENSIONS
Dimensions shown in inches and (mm).
8-Lead Plastic DIP (N-8)
8
1
4
5
0.430 (10.92)
0.348 (8.84)
0.280 (7.11)
0.240 (6.10)
PIN 1
0.100 (2.54)
BSC
SEATING
PLANE
0.022 (0.558)
0.014 (0.356)
0.060 (1.52)
0.015 (0.38)
0.210 (5.33)
MAX
0.130
(3.30)
MIN
0.070 (1.77)
0.045 (1.15)
0.160 (4.06)
0.115 (2.93)
0.325 (8.25)
0.300 (7.62)
0.015 (0.381)
0.008 (0.204)
0.195 (4.95)
0.115 (2.93)
8-Lead SOIC (SO-8)
(Narrow Body)
8
5
4
1
0.1968 (5.00)
0.1890 (4.80)
0.2440 (6.20)
0.2284 (5.80)
PIN 1
0.1574 (4.00)
0.1497 (3.80)
0.0500 (1.27)
BSC
0.0688 (1.75)
0.0532 (1.35)
SEATING
PLANE
0.0098 (0.25)
0.0040 (0.10)
0.0192 (0.49)
0.0138 (0.35)
0.0098 (0.25)
0.0075 (0.19)
0.0500 (1.27)
0.0160 (0.41)
8
0
0.0196 (0.50)
0.0099 (0.25)
x 45
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